Correlated electric fluctuations in GaN nanowire devices

L. C. Li; S. Y. Huang; J. A. Wei; Y. W. Suen; M. W. Lee; W. H. Hsieh; T. W. Liu; C. C. Chen

doi:10.1166/jnn.2009.C072

Correlated electric fluctuations in GaN nanowire devices

L. C. Li
, S. Y. Huang
, J. A. Wei
, Y. W. Suen
, M. W. Lee
, W. H. Hsieh
, T. W. Liu
, C. C. Chen

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.

Original language	English
Pages (from-to)	1000-1003
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	9
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2009.C072
Publication status	Published - 2009 Feb

Keywords

Correlation
Cross spectrum
Electric fluctuation
GaN nanowire
Low-frequency excess noise
Noise

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

Access to Document

10.1166/jnn.2009.C072

Cite this

@article{9cf128d9dec54518be737b48eaa12d1b,

title = "Correlated electric fluctuations in GaN nanowire devices",

abstract = "We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.",

keywords = "Correlation, Cross spectrum, Electric fluctuation, GaN nanowire, Low-frequency excess noise, Noise",

author = "Li, \{L. C.\} and Huang, \{S. Y.\} and Wei, \{J. A.\} and Suen, \{Y. W.\} and Lee, \{M. W.\} and Hsieh, \{W. H.\} and Liu, \{T. W.\} and Chen, \{C. C.\}",

year = "2009",

month = feb,

doi = "10.1166/jnn.2009.C072",

language = "English",

volume = "9",

pages = "1000--1003",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "2",

}

TY - JOUR

T1 - Correlated electric fluctuations in GaN nanowire devices

AU - Li, L. C.

AU - Huang, S. Y.

AU - Wei, J. A.

AU - Suen, Y. W.

AU - Lee, M. W.

AU - Hsieh, W. H.

AU - Liu, T. W.

AU - Chen, C. C.

PY - 2009/2

Y1 - 2009/2

N2 - We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.

AB - We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.

KW - Correlation

KW - Cross spectrum

KW - Electric fluctuation

KW - GaN nanowire

KW - Low-frequency excess noise

KW - Noise

UR - https://www.scopus.com/pages/publications/67649249513

UR - https://www.scopus.com/pages/publications/67649249513#tab=citedBy

U2 - 10.1166/jnn.2009.C072

DO - 10.1166/jnn.2009.C072

M3 - Article

AN - SCOPUS:67649249513

SN - 1533-4880

VL - 9

SP - 1000

EP - 1003

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 2

ER -

Correlated electric fluctuations in GaN nanowire devices

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this