Correlated electric fluctuations in GaN nanowire devices

L. C. Li; S. Y. Huang; J. A. Wei; Y. W. Suen; M. W. Lee; W. H. Hsieh; T. W. Liu; C. C. Chen

doi:10.1166/jnn.2009.C072

Correlated electric fluctuations in GaN nanowire devices

L. C. Li, S. Y. Huang, J. A. Wei, Y. W. Suen, M. W. Lee, W. H. Hsieh, T. W. Liu, C. C. Chen

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.

Original language	English
Pages (from-to)	1000-1003
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	9
Issue number	2
DOIs	https://doi.org/10.1166/jnn.2009.C072
Publication status	Published - 2009 Feb

Keywords

Correlation
Cross spectrum
Electric fluctuation
GaN nanowire
Low-frequency excess noise
Noise

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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10.1166/jnn.2009.C072

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title = "Correlated electric fluctuations in GaN nanowire devices",

abstract = "We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.",

keywords = "Correlation, Cross spectrum, Electric fluctuation, GaN nanowire, Low-frequency excess noise, Noise",

author = "Li, {L. C.} and Huang, {S. Y.} and Wei, {J. A.} and Suen, {Y. W.} and Lee, {M. W.} and Hsieh, {W. H.} and Liu, {T. W.} and Chen, {C. C.}",

year = "2009",

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doi = "10.1166/jnn.2009.C072",

language = "English",

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pages = "1000--1003",

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T1 - Correlated electric fluctuations in GaN nanowire devices

AU - Li, L. C.

AU - Huang, S. Y.

AU - Wei, J. A.

AU - Suen, Y. W.

AU - Lee, M. W.

AU - Hsieh, W. H.

AU - Liu, T. W.

AU - Chen, C. C.

PY - 2009/2

Y1 - 2009/2

N2 - We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.

AB - We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.

KW - Correlation

KW - Cross spectrum

KW - Electric fluctuation

KW - GaN nanowire

KW - Low-frequency excess noise

KW - Noise

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DO - 10.1166/jnn.2009.C072

M3 - Article

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VL - 9

SP - 1000

EP - 1003

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 2

ER -

Correlated electric fluctuations in GaN nanowire devices

Abstract

Keywords

ASJC Scopus subject areas

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