Correlated electric fluctuations in GaN nanowire devices

L. C. Li, S. Y. Huang, J. A. Wei, Y. W. Suen, M. W. Lee, W. H. Hsieh, T. W. Liu, Chia Chun Chen

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report an experimental study on the correlation spectrums between different sections of a multicontact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.

Original languageEnglish
Pages (from-to)1000-1003
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume9
Issue number2
DOIs
Publication statusPublished - 2009 Feb 1

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Keywords

  • Correlation
  • Cross spectrum
  • Electric fluctuation
  • GaN nanowire
  • Low-frequency excess noise
  • Noise

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Li, L. C., Huang, S. Y., Wei, J. A., Suen, Y. W., Lee, M. W., Hsieh, W. H., Liu, T. W., & Chen, C. C. (2009). Correlated electric fluctuations in GaN nanowire devices. Journal of Nanoscience and Nanotechnology, 9(2), 1000-1003. https://doi.org/10.1166/jnn.2009.C072