Abstract
We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.
| Original language | English |
|---|---|
| Title of host publication | 24th International Display Workshops, IDW 2017 |
| Publisher | International Display Workshops |
| Pages | 308-311 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781510858992 |
| Publication status | Published - 2017 |
| Event | 24th International Display Workshops, IDW 2017 - Sendai, Japan Duration: 2017 Dec 6 → 2017 Dec 8 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 1 |
| ISSN (Print) | 1883-2490 |
Other
| Other | 24th International Display Workshops, IDW 2017 |
|---|---|
| Country | Japan |
| City | Sendai |
| Period | 2017/12/06 → 2017/12/08 |
Keywords
- IGZO
- Quantum interference
- TFT
- Weak antilocalization
- Weak localization
ASJC Scopus subject areas
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
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