Abstract
We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.
| Original language | English |
|---|---|
| Title of host publication | 24th International Display Workshops, IDW 2017 |
| Publisher | International Display Workshops |
| Pages | 308-311 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781510858992 |
| Publication status | Published - 2017 Jan 1 |
| Event | 24th International Display Workshops, IDW 2017 - Sendai, Japan Duration: 2017 Dec 6 → 2017 Dec 8 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 1 |
| ISSN (Print) | 1883-2490 |
Other
| Other | 24th International Display Workshops, IDW 2017 |
|---|---|
| Country | Japan |
| City | Sendai |
| Period | 17/12/6 → 17/12/8 |
Fingerprint
Keywords
- IGZO
- Quantum interference
- TFT
- Weak antilocalization
- Weak localization
ASJC Scopus subject areas
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Radiology Nuclear Medicine and imaging
Cite this
Controllable quantum interference in amorphous in GaZnO thin-film transistors. / Wang, Wei Hsiang; Lyu, Syue Ru; Heredia, Elica; Liu, Shu Hao; Jiang, Pei-hsun; Liao, Po Yung; Chang, Ting Chang; Chen, Hua Mao.
24th International Display Workshops, IDW 2017. International Display Workshops, 2017. p. 308-311 (Proceedings of the International Display Workshops; Vol. 1).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Controllable quantum interference in amorphous in GaZnO thin-film transistors
AU - Wang, Wei Hsiang
AU - Lyu, Syue Ru
AU - Heredia, Elica
AU - Liu, Shu Hao
AU - Jiang, Pei-hsun
AU - Liao, Po Yung
AU - Chang, Ting Chang
AU - Chen, Hua Mao
PY - 2017/1/1
Y1 - 2017/1/1
N2 - We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.
AB - We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.
KW - IGZO
KW - Quantum interference
KW - TFT
KW - Weak antilocalization
KW - Weak localization
UR - http://www.scopus.com/inward/record.url?scp=85056274701&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85056274701&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:85056274701
T3 - Proceedings of the International Display Workshops
SP - 308
EP - 311
BT - 24th International Display Workshops, IDW 2017
PB - International Display Workshops
ER -