Controllable quantum interference in amorphous in GaZnO thin-film transistors

Wei Hsiang Wang, Syue Ru Lyu, Elica Heredia, Shu Hao Liu, Pei-hsun Jiang, Po Yung Liao, Ting Chang Chang, Hua Mao Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.

Original languageEnglish
Title of host publication24th International Display Workshops, IDW 2017
PublisherInternational Display Workshops
Pages308-311
Number of pages4
ISBN (Electronic)9781510858992
Publication statusPublished - 2017 Jan 1
Event24th International Display Workshops, IDW 2017 - Sendai, Japan
Duration: 2017 Dec 62017 Dec 8

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other24th International Display Workshops, IDW 2017
CountryJapan
CitySendai
Period17/12/617/12/8

Fingerprint

Thin film transistors
Transistors
Electrons
Temperature
Electric potential

Keywords

  • IGZO
  • Quantum interference
  • TFT
  • Weak antilocalization
  • Weak localization

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Wang, W. H., Lyu, S. R., Heredia, E., Liu, S. H., Jiang, P., Liao, P. Y., ... Chen, H. M. (2017). Controllable quantum interference in amorphous in GaZnO thin-film transistors. In 24th International Display Workshops, IDW 2017 (pp. 308-311). (Proceedings of the International Display Workshops; Vol. 1). International Display Workshops.

Controllable quantum interference in amorphous in GaZnO thin-film transistors. / Wang, Wei Hsiang; Lyu, Syue Ru; Heredia, Elica; Liu, Shu Hao; Jiang, Pei-hsun; Liao, Po Yung; Chang, Ting Chang; Chen, Hua Mao.

24th International Display Workshops, IDW 2017. International Display Workshops, 2017. p. 308-311 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wang, WH, Lyu, SR, Heredia, E, Liu, SH, Jiang, P, Liao, PY, Chang, TC & Chen, HM 2017, Controllable quantum interference in amorphous in GaZnO thin-film transistors. in 24th International Display Workshops, IDW 2017. Proceedings of the International Display Workshops, vol. 1, International Display Workshops, pp. 308-311, 24th International Display Workshops, IDW 2017, Sendai, Japan, 17/12/6.
Wang WH, Lyu SR, Heredia E, Liu SH, Jiang P, Liao PY et al. Controllable quantum interference in amorphous in GaZnO thin-film transistors. In 24th International Display Workshops, IDW 2017. International Display Workshops. 2017. p. 308-311. (Proceedings of the International Display Workshops).
Wang, Wei Hsiang ; Lyu, Syue Ru ; Heredia, Elica ; Liu, Shu Hao ; Jiang, Pei-hsun ; Liao, Po Yung ; Chang, Ting Chang ; Chen, Hua Mao. / Controllable quantum interference in amorphous in GaZnO thin-film transistors. 24th International Display Workshops, IDW 2017. International Display Workshops, 2017. pp. 308-311 (Proceedings of the International Display Workshops).
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