Controllable quantum interference in amorphous in GaZnO thin-film transistors

Wei Hsiang Wang, Syue Ru Lyu, Elica Heredia, Shu Hao Liu, Pei-hsun Jiang, Po Yung Liao, Ting Chang Chang, Hua Mao Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.

Original languageEnglish
Title of host publication24th International Display Workshops, IDW 2017
PublisherInternational Display Workshops
Pages308-311
Number of pages4
ISBN (Electronic)9781510858992
Publication statusPublished - 2017 Jan 1
Event24th International Display Workshops, IDW 2017 - Sendai, Japan
Duration: 2017 Dec 62017 Dec 8

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Other

Other24th International Display Workshops, IDW 2017
CountryJapan
CitySendai
Period17/12/617/12/8

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Keywords

  • IGZO
  • Quantum interference
  • TFT
  • Weak antilocalization
  • Weak localization

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Wang, W. H., Lyu, S. R., Heredia, E., Liu, S. H., Jiang, P., Liao, P. Y., Chang, T. C., & Chen, H. M. (2017). Controllable quantum interference in amorphous in GaZnO thin-film transistors. In 24th International Display Workshops, IDW 2017 (pp. 308-311). (Proceedings of the International Display Workshops; Vol. 1). International Display Workshops.