Controllable quantum interference in amorphous in GaZn04 thin-film transistors

Wei Hsiang Wang; Syue Ru Lyu; Elica Heredia; Shu Hao Liu; Pei Hsun Jiang; Po Yung Liao; Ting Chang Chang; Hua Mao Chen

Controllable quantum interference in amorphous in GaZn04 thin-film transistors

Wei Hsiang Wang, Syue Ru Lyu, Elica Heredia, Shu Hao Liu, Pei Hsun Jiang, Po Yung Liao, Ting Chang Chang, Hua Mao Chen

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.

Original language	English
Title of host publication	24th International Display Workshops, IDW 2017
Publisher	International Display Workshops
Pages	308-311
Number of pages	4
ISBN (Electronic)	9781510858992
Publication status	Published - 2017
Event	24th International Display Workshops, IDW 2017 - Sendai, Japan Duration: 2017 Dec 6 → 2017 Dec 8

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Conference

Conference	24th International Display Workshops, IDW 2017
Country/Territory	Japan
City	Sendai
Period	2017/12/06 → 2017/12/08

Keywords

IGZO
Quantum interference
TFT
Weak antilocalization
Weak localization

ASJC Scopus subject areas

Computer Vision and Pattern Recognition
Human-Computer Interaction
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Radiology Nuclear Medicine and imaging

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Controllable quantum interference in amorphous in GaZn04 thin-film transistors. / Wang, Wei Hsiang; Lyu, Syue Ru; Heredia, Elica et al.
24th International Display Workshops, IDW 2017. International Display Workshops, 2017. p. 308-311 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, WH, Lyu, SR, Heredia, E, Liu, SH, Jiang, PH, Liao, PY, Chang, TC & Chen, HM 2017, Controllable quantum interference in amorphous in GaZn04 thin-film transistors. in 24th International Display Workshops, IDW 2017. Proceedings of the International Display Workshops, vol. 1, International Display Workshops, pp. 308-311, 24th International Display Workshops, IDW 2017, Sendai, Japan, 2017/12/06.

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title = "Controllable quantum interference in amorphous in GaZn04 thin-film transistors",

abstract = "We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.",

keywords = "IGZO, Quantum interference, TFT, Weak antilocalization, Weak localization",

author = "Wang, {Wei Hsiang} and Lyu, {Syue Ru} and Elica Heredia and Liu, {Shu Hao} and Jiang, {Pei Hsun} and Liao, {Po Yung} and Chang, {Ting Chang} and Chen, {Hua Mao}",

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AU - Wang, Wei Hsiang

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AU - Heredia, Elica

AU - Liu, Shu Hao

AU - Jiang, Pei Hsun

AU - Liao, Po Yung

AU - Chang, Ting Chang

AU - Chen, Hua Mao

PY - 2017

Y1 - 2017

N2 - We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.

AB - We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.

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KW - Quantum interference

KW - TFT

KW - Weak antilocalization

KW - Weak localization

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T2 - 24th International Display Workshops, IDW 2017

Y2 - 6 December 2017 through 8 December 2017

ER -

Controllable quantum interference in amorphous in GaZn04 thin-film transistors

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

UN SDGs

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