Controllable quantum interference in amorphous in GaZn04 thin-film transistors

Wei Hsiang Wang, Syue Ru Lyu, Elica Heredia, Shu Hao Liu, Pei Hsun Jiang, Po Yung Liao, Ting Chang Chang, Hua Mao Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We report on the low-temperature magnetoconductivity of amorphous lnGaZn04 (a-IGZO) thin-Wm transistors (TFTs). The magnetoconductivity exhibits coexistence of weak localization (WL) and weak antilocalization (WAL), and their competitions can be contmlled by the gate voltage. Our findings demonstrate gate-controlled quantum interference in the electron systems in a-IGZO TFTs.

Original languageEnglish
Title of host publication24th International Display Workshops, IDW 2017
PublisherInternational Display Workshops
Number of pages4
ISBN (Electronic)9781510858992
Publication statusPublished - 2017
Event24th International Display Workshops, IDW 2017 - Sendai, Japan
Duration: 2017 Dec 62017 Dec 8

Publication series

NameProceedings of the International Display Workshops
ISSN (Print)1883-2490


Conference24th International Display Workshops, IDW 2017


  • IGZO
  • Quantum interference
  • TFT
  • Weak antilocalization
  • Weak localization

ASJC Scopus subject areas

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging


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