Comprehensively study on a ballistic-injection AND-type flash memory cell

Meng Yi Wu*, Sheng Huei Dai, Shu Fen Hu, Evans Ching Sung Yang, Charles Ching Hsiang Hsu, Ya Chin King

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3-10-4 and small cell size of 5F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.

Original languageEnglish
Pages (from-to)674-679
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number2 A
Publication statusPublished - 2006 Feb 8
Externally publishedYes


  • AND memory
  • Ballistic
  • Flash memory
  • Non-volNarkatile memory
  • Split gate flash

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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