Comprehensively study on a ballistic-injection AND-type flash memory cell

Meng Yi Wu; Sheng Huei Dai; Shu Fen Hu; Evans Ching Sung Yang; Charles Ching Hsiang Hsu; Ya Chin King

doi:10.1143/JJAP.45.674

Comprehensively study on a ballistic-injection AND-type flash memory cell

Meng Yi Wu^*, Sheng Huei Dai, Shu Fen Hu, Evans Ching Sung Yang, Charles Ching Hsiang Hsu, Ya Chin King

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10^-3-10^-4 and small cell size of 5F². In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.

Original language	English
Pages (from-to)	674-679
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.45.674
Publication status	Published - 2006 Feb 8
Externally published	Yes

Keywords

AND memory
Ballistic
Flash memory
Non-volNarkatile memory
Split gate flash

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.45.674

Cite this

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title = "Comprehensively study on a ballistic-injection AND-type flash memory cell",

abstract = "In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3-10-4 and small cell size of 5F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.",

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AU - Wu, Meng Yi

AU - Dai, Sheng Huei

AU - Hu, Shu Fen

AU - Yang, Evans Ching Sung

AU - Hsu, Charles Ching Hsiang

AU - King, Ya Chin

PY - 2006/2/8

Y1 - 2006/2/8

N2 - In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3-10-4 and small cell size of 5F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.

AB - In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3-10-4 and small cell size of 5F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.

KW - AND memory

KW - Ballistic

KW - Flash memory

KW - Non-volNarkatile memory

KW - Split gate flash

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Comprehensively study on a ballistic-injection AND-type flash memory cell

Abstract

Keywords

ASJC Scopus subject areas

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