Comprehensively study on a ballistic-injection AND-type flash memory cell

Meng Yi Wu, Sheng Huei Dai, Shu-Fen Hu, Evans Ching Sung Yang, Charles Ching Hsiang Hsu, Ya Chin King

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3-10-4 and small cell size of 5F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.

Original languageEnglish
Pages (from-to)674-679
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number2 A
DOIs
Publication statusPublished - 2006 Feb 8

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Flash memory
Ballistics
programming
ballistics
flash
injection
cells
low voltage
Data storage equipment
Electric potential

Keywords

  • AND memory
  • Ballistic
  • Flash memory
  • Non-volNarkatile memory
  • Split gate flash

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Comprehensively study on a ballistic-injection AND-type flash memory cell. / Wu, Meng Yi; Dai, Sheng Huei; Hu, Shu-Fen; Yang, Evans Ching Sung; Hsu, Charles Ching Hsiang; King, Ya Chin.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 2 A, 08.02.2006, p. 674-679.

Research output: Contribution to journalArticle

Wu, Meng Yi ; Dai, Sheng Huei ; Hu, Shu-Fen ; Yang, Evans Ching Sung ; Hsu, Charles Ching Hsiang ; King, Ya Chin. / Comprehensively study on a ballistic-injection AND-type flash memory cell. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 2 A. pp. 674-679.
@article{0c08046298f248b6a3fa9f9c255e8827,
title = "Comprehensively study on a ballistic-injection AND-type flash memory cell",
abstract = "In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3-10-4 and small cell size of 5F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.",
keywords = "AND memory, Ballistic, Flash memory, Non-volNarkatile memory, Split gate flash",
author = "Wu, {Meng Yi} and Dai, {Sheng Huei} and Shu-Fen Hu and Yang, {Evans Ching Sung} and Hsu, {Charles Ching Hsiang} and King, {Ya Chin}",
year = "2006",
month = "2",
day = "8",
doi = "10.1143/JJAP.45.674",
language = "English",
volume = "45",
pages = "674--679",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "2 A",

}

TY - JOUR

T1 - Comprehensively study on a ballistic-injection AND-type flash memory cell

AU - Wu, Meng Yi

AU - Dai, Sheng Huei

AU - Hu, Shu-Fen

AU - Yang, Evans Ching Sung

AU - Hsu, Charles Ching Hsiang

AU - King, Ya Chin

PY - 2006/2/8

Y1 - 2006/2/8

N2 - In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3-10-4 and small cell size of 5F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.

AB - In this paper, a novel ballistic-injection AND-type (BiAND) split gate flash memory, with a trench select gate and buried n+ source is proposed. The ballistic source side injection (BSSI) programming mechanism is performed and realized in a contactless AND array, which features high programming efficiency, 10-3-10-4 and small cell size of 5F2. In addition, both the programming speed and read current is enhanced by the shared select gate structure. The BiAND flash memory is thus promising for low-voltage, high efficient, fast speed, scalable and high reliability non-volatile memory applications.

KW - AND memory

KW - Ballistic

KW - Flash memory

KW - Non-volNarkatile memory

KW - Split gate flash

UR - http://www.scopus.com/inward/record.url?scp=32244446643&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=32244446643&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.674

DO - 10.1143/JJAP.45.674

M3 - Article

AN - SCOPUS:32244446643

VL - 45

SP - 674

EP - 679

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2 A

ER -