Comprehensive Low-Frequency and RF Noise Characteristics in Strained-Si NMOSFETs

M. H. Lee*, P. S. Chen, W. C. Hua, C. Y. Yu, Y. T. Tseng, S. Maikap, Y. M. Hsu, C. W. Liu, S. C. Lu, W. Y. Hsieh, M. J. Tsai

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

22 Citations (Scopus)

Abstract

Due to the mobility enhancement of strained-Si channel, the strained-Si MOSFET has reportedly a great improvement on DC characteristics. The improvement on the cut-off frequency (fT) of strained-Si device is demonstrated in this work. The strained-Si device has the same flicker noise (1/f) as the control Si device as long as no threading dislocation exists in the channel and the thermal budget is properly controlled. The large density of defect in the relaxed SiGe buffer layers shows no effect on the flicker noise. The threading dislocation penetrating into the strained-Si channel and Ge outdiffusion can degrade the flicker noise of strained-Si NMOSFETs. A thicker strained-Si channel layer can reduce the roughness scattering from the underneath strained Si/relaxed SiGe heterojunction, and yields a higher mobility, higher fT, and lower noise figures, as compared to the thin strained-Si channel.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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