Compositional determination of oxygen-exposed Co/Ge(1 1 1) film: Surfactant effect

C. W. Lai, Y. L. Chiou, H. W. Chang, W. Y. Chan, K. J. Hwang, J. S. Tsay, Y. D. Yao

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We apply the Monte Carlo simulation with Auger sputtering depth profiling to quantitatively determine the distribution of oxygen in the film O/Co/Ge(1 1 1). The well fitting curves of experimental data and simulation reveal a crucial fact that oxygen is highly mobile, has strong tendency to float out to the surface during subsequent oxygen exposure and cobalt deposition, and behaves as surfactant in this system. The simulation results show that full oxygen should be on the topmost layer, 88-90% oxygen is in the second layer, 77-80% oxygen is in third layer, and 57-60% oxygen is in fourth layer of the O/Co/Ge(1 1 1) system.

Original languageEnglish
Pages (from-to)e75-e77
JournalJournal of Magnetism and Magnetic Materials
Volume304
Issue number1
DOIs
Publication statusPublished - 2006 Sep 1

Fingerprint

Surface-Active Agents
Surface active agents
surfactants
Oxygen
oxygen
floats
Depth profiling
simulation
curve fitting
Curve fitting
Cobalt
Sputtering
tendencies
cobalt
sputtering

Keywords

  • Auger electron spectroscopy
  • Depth profiling
  • Monte Carlo simulation
  • Surfactant

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Compositional determination of oxygen-exposed Co/Ge(1 1 1) film : Surfactant effect. / Lai, C. W.; Chiou, Y. L.; Chang, H. W.; Chan, W. Y.; Hwang, K. J.; Tsay, J. S.; Yao, Y. D.

In: Journal of Magnetism and Magnetic Materials, Vol. 304, No. 1, 01.09.2006, p. e75-e77.

Research output: Contribution to journalArticle

Lai, C. W. ; Chiou, Y. L. ; Chang, H. W. ; Chan, W. Y. ; Hwang, K. J. ; Tsay, J. S. ; Yao, Y. D. / Compositional determination of oxygen-exposed Co/Ge(1 1 1) film : Surfactant effect. In: Journal of Magnetism and Magnetic Materials. 2006 ; Vol. 304, No. 1. pp. e75-e77.
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AB - We apply the Monte Carlo simulation with Auger sputtering depth profiling to quantitatively determine the distribution of oxygen in the film O/Co/Ge(1 1 1). The well fitting curves of experimental data and simulation reveal a crucial fact that oxygen is highly mobile, has strong tendency to float out to the surface during subsequent oxygen exposure and cobalt deposition, and behaves as surfactant in this system. The simulation results show that full oxygen should be on the topmost layer, 88-90% oxygen is in the second layer, 77-80% oxygen is in third layer, and 57-60% oxygen is in fourth layer of the O/Co/Ge(1 1 1) system.

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