Complex photonic band structures in a photonic crystal containing lossy semiconductor INSB

T. W. Chang, J. J. Wu, C. J. Wu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

In this work, complex photonic band structure (CPBS) in a semiconductor-dielectric photonic crystal (SDPC) operating at terahertz frequencies is theoretically investigated. The SDPC is air/(S/D)N /air where the dielectric layer D is SiO2, the semiconductor layer S is an intrinsic semiconductor InSb, and N is the number of periods. Using the experimental data for the strongly temperature- dependent plasma frequency and damping frequency for InSb, we calculate the CPBS for the infinite SDPC at distinct operating temperatures. The CPBS is then compared with the calculated transmittance, reflectance, and absorptance as well in the finite SDPC. Based on the calculated CPBS, the role played by the loss factor (damping frequency), in InSb is revealed. Additionally, from the calculated transmittance spectra, we further investigate the cutoff frequency for the SDPC. The dependences of cutoff frequency on the number of periods and the filling factor of semiconductor layer are numerically illustrated.

Original languageEnglish
Pages (from-to)153-167
Number of pages15
JournalProgress in Electromagnetics Research
Volume131
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

Photonic crystals
Band structure
Photonics
photonics
Semiconductor materials
crystals
Cutoff frequency
Damping
transmittance
cut-off
damping
absorptance
Air
air
plasma frequencies
operating temperature
Plasmas
Temperature
reflectance

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Complex photonic band structures in a photonic crystal containing lossy semiconductor INSB. / Chang, T. W.; Wu, J. J.; Wu, C. J.

In: Progress in Electromagnetics Research, Vol. 131, 01.01.2012, p. 153-167.

Research output: Contribution to journalArticle

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