Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

Wei Hsiang Wang; Syue Ru Lyu; Elica Heredia; Shu Hao Liu; Pei hsun Jiang; Po Yung Liao; Ting Chang Chang; Hua Mao Chen

doi:10.1063/1.4974080

Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

Wei Hsiang Wang, Syue Ru Lyu, Elica Heredia, Shu Hao Liu, Pei hsun Jiang, Po Yung Liao, Ting Chang Chang, Hua Mao Chen

Department of Physics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

Original language	English
Article number	022106
Journal	Applied Physics Letters
Volume	110
Issue number	2
DOIs	https://doi.org/10.1063/1.4974080
Publication status	Published - 2017 Jan 9

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{5fd2fdb3c72c4ba3b2f55ce992891fcf,

title = "Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors",

abstract = "We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.",

author = "Wang, {Wei Hsiang} and Lyu, {Syue Ru} and Elica Heredia and Liu, {Shu Hao} and Jiang, {Pei hsun} and Liao, {Po Yung} and Chang, {Ting Chang} and Chen, {Hua Mao}",

note = "Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = jan,

day = "9",

doi = "10.1063/1.4974080",

language = "English",

volume = "110",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

AU - Wang, Wei Hsiang

AU - Lyu, Syue Ru

AU - Heredia, Elica

AU - Liu, Shu Hao

AU - Jiang, Pei hsun

AU - Liao, Po Yung

AU - Chang, Ting Chang

AU - Chen, Hua Mao

PY - 2017/1/9

Y1 - 2017/1/9

N2 - We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

AB - We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

UR - http://www.scopus.com/inward/record.url?scp=85009727055&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85009727055&partnerID=8YFLogxK

U2 - 10.1063/1.4974080

DO - 10.1063/1.4974080

M3 - Article

AN - SCOPUS:85009727055

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022106

ER -

Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

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