Competing weak localization and weak antilocalization in amorphous indium-gallium-zinc-oxide thin-film transistors

Wei Hsiang Wang, Syue Ru Lyu, Elica Heredia, Shu Hao Liu, Pei hsun Jiang, Po Yung Liao, Ting Chang Chang, Hua Mao Chen

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We have investigated the gate-voltage dependence and the temperature dependence of the magnetoconductivity of amorphous indium-gallium-zinc-oxide thin-film transistors. A weak-localization feature is observed at small magnetic fields on top of an overall negative magnetoconductivity at higher fields. An intriguing controllable competition between weak localization and weak antilocalization is observed by tuning the gate voltage or by varying the temperature. Our findings reflect controllable quantum interference competition in the electron systems in amorphous indium-gallium-zinc-oxide thin-film transistors.

Original languageEnglish
Article number022106
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 2017 Jan 9


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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