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Comparison of NMOSFET and PMOSFET devices that combine CESL stressor and SiGe channel
H. W. Hsu, H. S. Huang, C. C. Lee, S. Y. Chen, H. H. Teng, M. R. Peng, M. C. Wang, C. H. Liu*
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
6
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(Scopus)