Comparison of magnetic properties of ultrathin Co/Si(1 1 1) and Co/Ag/Si(1 1 1) films

J. S. Tsay; Y. D. Yao; Y. Liou; S. F. Lee; C. S. Yang

doi:10.1016/S0304-8853(99)00689-7

Comparison of magnetic properties of ultrathin Co/Si(1 1 1) and Co/Ag/Si(1 1 1) films

J. S. Tsay^*, Y. D. Yao, Y. Liou, S. F. Lee, C. S. Yang

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

The thermal stability of the magnetization of the Co/Ag/Si(1 1 1) film is lower than that of the Co/Si(1 1 1) film. From Auger electron spectroscopy, we demonstrate that Ag atoms in the Co/Ag/Si(1 1 1) film segregate to top layers below 350 K. The segregation of Ag atoms improves the diffusion of Co into Si(1 1 1) substrate. Annealing 10.5 ML Co/Si(1 1 1) film causes the easy axis of magnetization to transform from an in-plane to a cant out-of-plane. The in-plane magnetization of 10.5 ML in Co/Ag/Si(1 1 1) film persists after annealing.

Original language	English
Pages (from-to)	208-210
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	209
Issue number	1-3
DOIs	https://doi.org/10.1016/S0304-8853(99)00689-7
Publication status	Published - 2000 Feb
Externally published	Yes
Event	Proceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) - Taipei, Taiwan Duration: 1999 May 24 → 1999 May 25

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/S0304-8853(99)00689-7

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@article{43b7b90cdf9a4e429b4e86cf9575d023,

title = "Comparison of magnetic properties of ultrathin Co/Si(1 1 1) and Co/Ag/Si(1 1 1) films",

abstract = "The thermal stability of the magnetization of the Co/Ag/Si(1 1 1) film is lower than that of the Co/Si(1 1 1) film. From Auger electron spectroscopy, we demonstrate that Ag atoms in the Co/Ag/Si(1 1 1) film segregate to top layers below 350 K. The segregation of Ag atoms improves the diffusion of Co into Si(1 1 1) substrate. Annealing 10.5 ML Co/Si(1 1 1) film causes the easy axis of magnetization to transform from an in-plane to a cant out-of-plane. The in-plane magnetization of 10.5 ML in Co/Ag/Si(1 1 1) film persists after annealing.",

author = "Tsay, {J. S.} and Yao, {Y. D.} and Y. Liou and Lee, {S. F.} and Yang, {C. S.}",

note = "Funding Information: This work was supported by the National Science Council of ROC under Grant No. NSC 88-2112-M-001-038.; Proceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) ; Conference date: 24-05-1999 Through 25-05-1999",

year = "2000",

month = feb,

doi = "10.1016/S0304-8853(99)00689-7",

language = "English",

volume = "209",

pages = "208--210",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

number = "1-3",

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TY - JOUR

T1 - Comparison of magnetic properties of ultrathin Co/Si(1 1 1) and Co/Ag/Si(1 1 1) films

AU - Tsay, J. S.

AU - Yao, Y. D.

AU - Liou, Y.

AU - Lee, S. F.

AU - Yang, C. S.

N1 - Funding Information: This work was supported by the National Science Council of ROC under Grant No. NSC 88-2112-M-001-038.

PY - 2000/2

Y1 - 2000/2

N2 - The thermal stability of the magnetization of the Co/Ag/Si(1 1 1) film is lower than that of the Co/Si(1 1 1) film. From Auger electron spectroscopy, we demonstrate that Ag atoms in the Co/Ag/Si(1 1 1) film segregate to top layers below 350 K. The segregation of Ag atoms improves the diffusion of Co into Si(1 1 1) substrate. Annealing 10.5 ML Co/Si(1 1 1) film causes the easy axis of magnetization to transform from an in-plane to a cant out-of-plane. The in-plane magnetization of 10.5 ML in Co/Ag/Si(1 1 1) film persists after annealing.

AB - The thermal stability of the magnetization of the Co/Ag/Si(1 1 1) film is lower than that of the Co/Si(1 1 1) film. From Auger electron spectroscopy, we demonstrate that Ag atoms in the Co/Ag/Si(1 1 1) film segregate to top layers below 350 K. The segregation of Ag atoms improves the diffusion of Co into Si(1 1 1) substrate. Annealing 10.5 ML Co/Si(1 1 1) film causes the easy axis of magnetization to transform from an in-plane to a cant out-of-plane. The in-plane magnetization of 10.5 ML in Co/Ag/Si(1 1 1) film persists after annealing.

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U2 - 10.1016/S0304-8853(99)00689-7

DO - 10.1016/S0304-8853(99)00689-7

M3 - Conference article

AN - SCOPUS:0034135423

SN - 0304-8853

VL - 209

SP - 208

EP - 210

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1-3

T2 - Proceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99)

Y2 - 24 May 1999 through 25 May 1999

ER -

Comparison of magnetic properties of ultrathin Co/Si(1 1 1) and Co/Ag/Si(1 1 1) films

Abstract

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