Comparison of magnetic properties of ultrathin Co/Si(1 1 1) and Co/Ag/Si(1 1 1) films

J. S. Tsay, Y. D. Yao, Y. Liou, S. F. Lee, C. S. Yang

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

The thermal stability of the magnetization of the Co/Ag/Si(1 1 1) film is lower than that of the Co/Si(1 1 1) film. From Auger electron spectroscopy, we demonstrate that Ag atoms in the Co/Ag/Si(1 1 1) film segregate to top layers below 350 K. The segregation of Ag atoms improves the diffusion of Co into Si(1 1 1) substrate. Annealing 10.5 ML Co/Si(1 1 1) film causes the easy axis of magnetization to transform from an in-plane to a cant out-of-plane. The in-plane magnetization of 10.5 ML in Co/Ag/Si(1 1 1) film persists after annealing.

Original languageEnglish
Pages (from-to)208-210
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume209
Issue number1-3
DOIs
Publication statusPublished - 2000 Feb
EventProceedings of the 1999 International Symposium on Advanced Magnetic Technologies (ISAMT'99) - Taipei, Taiwan
Duration: 1999 May 241999 May 25

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Magnetic properties
magnetic properties
Magnetization
magnetization
Annealing
Atoms
annealing
Auger electron spectroscopy
Auger spectroscopy
electron spectroscopy
atoms
Thermodynamic stability
thermal stability
slopes
causes
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Comparison of magnetic properties of ultrathin Co/Si(1 1 1) and Co/Ag/Si(1 1 1) films. / Tsay, J. S.; Yao, Y. D.; Liou, Y.; Lee, S. F.; Yang, C. S.

In: Journal of Magnetism and Magnetic Materials, Vol. 209, No. 1-3, 02.2000, p. 208-210.

Research output: Contribution to journalConference article

Tsay, J. S. ; Yao, Y. D. ; Liou, Y. ; Lee, S. F. ; Yang, C. S. / Comparison of magnetic properties of ultrathin Co/Si(1 1 1) and Co/Ag/Si(1 1 1) films. In: Journal of Magnetism and Magnetic Materials. 2000 ; Vol. 209, No. 1-3. pp. 208-210.
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AU - Lee, S. F.

AU - Yang, C. S.

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AB - The thermal stability of the magnetization of the Co/Ag/Si(1 1 1) film is lower than that of the Co/Si(1 1 1) film. From Auger electron spectroscopy, we demonstrate that Ag atoms in the Co/Ag/Si(1 1 1) film segregate to top layers below 350 K. The segregation of Ag atoms improves the diffusion of Co into Si(1 1 1) substrate. Annealing 10.5 ML Co/Si(1 1 1) film causes the easy axis of magnetization to transform from an in-plane to a cant out-of-plane. The in-plane magnetization of 10.5 ML in Co/Ag/Si(1 1 1) film persists after annealing.

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