Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

Tung Ming Pan, Hsiu Shan Lin, Main Gwo Chen, Chuan Hsi Liu, Yih Jau Chang

Research output: Contribution to journalArticle

7 Citations (Scopus)


A comparison of RTNO, N2O and N2O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 Å is explored. The N2O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices.

Original languageEnglish
Pages (from-to)416-418
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
Publication statusPublished - 2002 Jul
Externally publishedYes



  • NO
  • Oxynitride
  • RPN
  • RTNO
  • Ultrathin

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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