Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics

Tung Ming Pan, Hsiu Shan Lin, Main Gwo Chen, Chuan Hsi Liu, Yih Jau Chang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A comparison of RTNO, N2O and N2O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 Å is explored. The N2O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices.

Original languageEnglish
Pages (from-to)416-418
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number7
DOIs
Publication statusPublished - 2002 Jul
Externally publishedYes

Fingerprint

Gate dielectrics
Nitridation
ULSI circuits
Plasmas
Dielectric films
Oxides

Keywords

  • NO
  • NO-ISSG
  • Oxynitride
  • RPN
  • RTNO
  • Ultrathin

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics. / Pan, Tung Ming; Lin, Hsiu Shan; Chen, Main Gwo; Liu, Chuan Hsi; Chang, Yih Jau.

In: IEEE Electron Device Letters, Vol. 23, No. 7, 07.2002, p. 416-418.

Research output: Contribution to journalArticle

Pan, Tung Ming ; Lin, Hsiu Shan ; Chen, Main Gwo ; Liu, Chuan Hsi ; Chang, Yih Jau. / Comparison of electrical and reliability characteristics of different 14 Å oxynitride gate dielectrics. In: IEEE Electron Device Letters. 2002 ; Vol. 23, No. 7. pp. 416-418.
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