Combined optical, surface and nuclear microscopic assessment of porous silicon formed in HF-acetonitrile

Z. C. Feng, J. W. Yu, K. Li, Y. P. Feng, K. R. Padmanabhan, T. R. Yang

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6 Citations (Scopus)

Abstract

A new type of HF solution, HF-acetonitrile (MeCN), has been employed to produce 10-30 μm thick porous silicon (P-Si) layers by photoelectrochemical etching of different types of Si wafers, Si(100), Si(111) and polycrystalline Si, with different resistivities. A combined optical, surface and nuclear microscopic assessment of these P-Si layers was performed using photoluminescence (PL), Raman scattering, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. With increasing resistivity of the Si(100) wafers, the P-Si layers show a slight blue shift of their visible light emission peak energy, an up shift of the peak position and a narrowing of the band width of the dominant Raman band, and a decrease in the amount of residual elemental Si on the surface. Those Si(111) wafers, etched in HF-MeCN, showed no porous structures and no visible light emission.

Original languageEnglish
Pages (from-to)3254-3260
Number of pages7
JournalSurface and Coatings Technology
Volume200
Issue number10 SPEC. ISS.
DOIs
Publication statusPublished - 2006 Feb 24

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Keywords

  • PL
  • Porous silicon
  • RBS
  • Raman
  • Raman scattering
  • SEM
  • XPS

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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