Abstract
In this paper, a CMOS magnetic field to frequency converter with high resolution is presented. It is composed of two voltage-controlled ring oscillators whose output frequency differences linearly vary with the magnetic field perpendicular to the chip surface. The prototype circuit has been fabricated in a 0.5-μm CMOS process and operated at a 5-V supply voltage. The measured sensitivity is 24 kHz/mT and the power consumption is 5.1 mW. The small equivalent resolution of at least 20 μT can be achieved. The frequency offset is 42 kHz when no magnetic field applied. Its nonlinearity within ± 120 mT is smaller than 0.56%.
Original language | English |
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Pages (from-to) | 241-245 |
Number of pages | 5 |
Journal | IEEE Sensors Journal |
Volume | 3 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2003 Apr |
Externally published | Yes |
Keywords
- CMOS
- Magnetic MOSFET (MAGFET)
- Magnetically controlled oscillator (MCO)
- Magnetooperational amplifier (MOP)
ASJC Scopus subject areas
- Instrumentation
- Electrical and Electronic Engineering