CMOS magnetic field to frequency converter

Shr Lung Chen*, Chien Hung Kuo, Shen Iuan Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

In this paper, a CMOS magnetic field to frequency converter with high resolution is presented. It is composed of two voltage-controlled ring oscillators whose output frequency differences linearly vary with the magnetic field perpendicular to the chip surface. The prototype circuit has been fabricated in a 0.5-μm CMOS process and operated at a 5-V supply voltage. The measured sensitivity is 24 kHz/mT and the power consumption is 5.1 mW. The small equivalent resolution of at least 20 μT can be achieved. The frequency offset is 42 kHz when no magnetic field applied. Its nonlinearity within ± 120 mT is smaller than 0.56%.

Original languageEnglish
Pages (from-to)241-245
Number of pages5
JournalIEEE Sensors Journal
Volume3
Issue number2
DOIs
Publication statusPublished - 2003 Apr
Externally publishedYes

Keywords

  • CMOS
  • Magnetic MOSFET (MAGFET)
  • Magnetically controlled oscillator (MCO)
  • Magnetooperational amplifier (MOP)

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

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