Chiral anomaly and Weyl orbit in three-dimensional Dirac semimetal Cd3As2 grown on Si

Wei Chen Lin, Peng Ying Tsai, Jia Zhu Zou, Jie Ying Lee, Chun Wei Kuo, Hsin Hsuan Lee, Ching Yang Pan, Cheng Hsueh Yang, Sheng Zong Chen, Jyh Shyang Wang, Pei Hsun Jiang, Chi Te Liang*, Chiashain Chuang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Preparing Cd3As2, which is a three-dimensional (3D) Dirac semimetal in certain crystal orientation, on Si is highly desirable as such a sample may well be fully compatible with existing Si CMOS technology. However, there is a dearth of such a study regarding Cd3As2 films grown on Si showing the chiral anomaly. Here, for the first time, we report the novel preparation and fabrication technique of a Cd3As2 (112) film on a Si (111) substrate with a ZnTe (111) buffer layer which explicitly shows the chiral anomaly with a nontrivial Berry’s phase of π. Despite the Hall carrier density ( n 3 D ≈ 9.42 × 10 17 cm−3) of our Cd3As2 film, which is almost beyond the limit for the portents of a 3D Dirac semimetal to emerge, we observe large linear magnetoresistance in a perpendicular magnetic field and negative magnetoresistance in a parallel magnetic field. These results clearly demonstrate the chiral magnetic effect and 3D Dirac semimetallic behavior in our silicon-based Cd3As2 film. Our tailoring growth of Cd3As2 on a conventional substrate such as Si keeps the sample quality, while also achieving a low carrier concentration.

Original languageEnglish
Article number165002
Issue number16
Publication statusPublished - 2024 Apr 15


  • CdAs
  • Si CMOS
  • chiral anomaly
  • weak antilocalization

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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