Charge transport in amorphous Hf0.5Zr0.5O2

D. R. Islamov; T. V. Perevalov; V. A. Gritsenko; C. H. Cheng; A. Chin

doi:10.1063/1.4914900

Charge transport in amorphous Hf_0.5Zr_0.5O₂

D. R. Islamov, T. V. Perevalov, V. A. Gritsenko, C. H. Cheng, A. Chin

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf_0.5Zr_0.5O₂ is phonon-assisted tunneling between traps like in HfO₂ and ZrO₂. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf_0.5Zr_0.5O₂ were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf_0.5Zr_0.5O₂ was discussed.

Original language	English
Article number	102906
Journal	Applied Physics Letters
Volume	106
Issue number	10
DOIs	https://doi.org/10.1063/1.4914900
Publication status	Published - 2015 Mar 9

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Charge transport in amorphous Hf0.5Zr0.5O2",

abstract = "In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling between traps like in HfO2 and ZrO2. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf0.5Zr0.5O2 were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 was discussed.",

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AU - Islamov, D. R.

AU - Perevalov, T. V.

AU - Gritsenko, V. A.

AU - Cheng, C. H.

AU - Chin, A.

PY - 2015/3/9

Y1 - 2015/3/9

N2 - In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling between traps like in HfO2 and ZrO2. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf0.5Zr0.5O2 were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 was discussed.

AB - In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling between traps like in HfO2 and ZrO2. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf0.5Zr0.5O2 were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 was discussed.

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Charge transport in amorphous Hf_0.5Zr_0.5O₂

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