Charge transport in amorphous Hf0.5Zr0.5O2

D. R. Islamov, T. V. Perevalov, V. A. Gritsenko, C. H. Cheng, A. Chin

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

In this study, we demonstrated experimentally and theoretically that the charge transport mechanism in amorphous Hf0.5Zr0.5O2 is phonon-assisted tunneling between traps like in HfO2 and ZrO2. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf0.5Zr0.5O2 were determined based on comparison of experimental data on transport with different theories of charge transfer in dielectrics. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 was discussed.

Original languageEnglish
Article number102906
JournalApplied Physics Letters
Volume106
Issue number10
DOIs
Publication statusPublished - 2015 Mar 9

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Charge transport in amorphous Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>'. Together they form a unique fingerprint.

  • Cite this

    Islamov, D. R., Perevalov, T. V., Gritsenko, V. A., Cheng, C. H., & Chin, A. (2015). Charge transport in amorphous Hf0.5Zr0.5O2. Applied Physics Letters, 106(10), [102906]. https://doi.org/10.1063/1.4914900