Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition

Chih Chiang Shen, Yu Te Hsu, Lain Jong Li, Hsiang Lin Liu

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of chemical-vapordeposited monolayer MoS2 films. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency. Drude plasma frequency (∼7 THz) decreases with decreasing temperature while carrier relaxation time (∼26 fs) is almost temperature independent. The absorption spectrum of monolayer MoS2 shows a direct 1.95 eV band gap and charge transfer excitations that are ∼0:2 eV higher than those of the bulk counterpart. The ground-state exciton binding energy is found to be about 0.48 eV.

Original languageEnglish
Article number125801
JournalApplied Physics Express
Volume6
Issue number12
DOIs
Publication statusPublished - 2013 Dec 1

Fingerprint

Electronic structure
Chemical vapor deposition
Monolayers
vapor deposition
electronic structure
Spectroscopic ellipsometry
plasma frequencies
Binding energy
Charge carriers
Excitons
Relaxation time
Ground state
ellipsometry
Charge transfer
Absorption spectra
charge carriers
Energy gap
binding energy
relaxation time
charge transfer

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition. / Shen, Chih Chiang; Hsu, Yu Te; Li, Lain Jong; Liu, Hsiang Lin.

In: Applied Physics Express, Vol. 6, No. 12, 125801, 01.12.2013.

Research output: Contribution to journalArticle

@article{a7c1e7e6407c490ca78a7baa3cd0812f,
title = "Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition",
abstract = "THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of chemical-vapordeposited monolayer MoS2 films. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency. Drude plasma frequency (∼7 THz) decreases with decreasing temperature while carrier relaxation time (∼26 fs) is almost temperature independent. The absorption spectrum of monolayer MoS2 shows a direct 1.95 eV band gap and charge transfer excitations that are ∼0:2 eV higher than those of the bulk counterpart. The ground-state exciton binding energy is found to be about 0.48 eV.",
author = "Shen, {Chih Chiang} and Hsu, {Yu Te} and Li, {Lain Jong} and Liu, {Hsiang Lin}",
year = "2013",
month = "12",
day = "1",
doi = "10.7567/APEX.6.125801",
language = "English",
volume = "6",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "12",

}

TY - JOUR

T1 - Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition

AU - Shen, Chih Chiang

AU - Hsu, Yu Te

AU - Li, Lain Jong

AU - Liu, Hsiang Lin

PY - 2013/12/1

Y1 - 2013/12/1

N2 - THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of chemical-vapordeposited monolayer MoS2 films. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency. Drude plasma frequency (∼7 THz) decreases with decreasing temperature while carrier relaxation time (∼26 fs) is almost temperature independent. The absorption spectrum of monolayer MoS2 shows a direct 1.95 eV band gap and charge transfer excitations that are ∼0:2 eV higher than those of the bulk counterpart. The ground-state exciton binding energy is found to be about 0.48 eV.

AB - THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of chemical-vapordeposited monolayer MoS2 films. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency. Drude plasma frequency (∼7 THz) decreases with decreasing temperature while carrier relaxation time (∼26 fs) is almost temperature independent. The absorption spectrum of monolayer MoS2 shows a direct 1.95 eV band gap and charge transfer excitations that are ∼0:2 eV higher than those of the bulk counterpart. The ground-state exciton binding energy is found to be about 0.48 eV.

UR - http://www.scopus.com/inward/record.url?scp=84890765247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890765247&partnerID=8YFLogxK

U2 - 10.7567/APEX.6.125801

DO - 10.7567/APEX.6.125801

M3 - Article

VL - 6

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 12

M1 - 125801

ER -