Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition

Chih Chiang Shen, Yu Te Hsu, Lain Jong Li, Hsiang Lin Liu

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Abstract

THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of chemical-vapordeposited monolayer MoS2 films. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency. Drude plasma frequency (∼7 THz) decreases with decreasing temperature while carrier relaxation time (∼26 fs) is almost temperature independent. The absorption spectrum of monolayer MoS2 shows a direct 1.95 eV band gap and charge transfer excitations that are ∼0:2 eV higher than those of the bulk counterpart. The ground-state exciton binding energy is found to be about 0.48 eV.

Original languageEnglish
Article number125801
JournalApplied Physics Express
Volume6
Issue number12
DOIs
Publication statusPublished - 2013 Dec 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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