Charge dynamics and electronic structures of monolayer graphene with molecular doping

C. C. Shen; C. T. Lin; L. J. Li; H. L. Liu

doi:10.1063/1.4752131

Charge dynamics and electronic structures of monolayer graphene with molecular doping

C. C. Shen, C. T. Lin, L. J. Li, H. L. Liu^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of monolayer graphene with doping by triazine. The absorption spectrum of the triazine-doped film shows an optical excitation near 5.1 eV that is blue shifted compared with that of undoped analog. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency and a disorder-induced finite frequency peak around 155 cm ^-1. Drude plasma frequency (∼4400 cm ^-1) decreases with decreasing temperature while carrier relaxation time (∼13 fs) is almost temperature independent, implying the semiconducting behavior with thermal activation energy of 3 meV.

Original language	English
Article number	111907
Journal	Applied Physics Letters
Volume	101
Issue number	11
DOIs	https://doi.org/10.1063/1.4752131
Publication status	Published - 2012 Sept 10

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Charge dynamics and electronic structures of monolayer graphene with molecular doping",

abstract = "THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of monolayer graphene with doping by triazine. The absorption spectrum of the triazine-doped film shows an optical excitation near 5.1 eV that is blue shifted compared with that of undoped analog. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency and a disorder-induced finite frequency peak around 155 cm -1. Drude plasma frequency (∼4400 cm -1) decreases with decreasing temperature while carrier relaxation time (∼13 fs) is almost temperature independent, implying the semiconducting behavior with thermal activation energy of 3 meV.",

author = "Shen, {C. C.} and Lin, {C. T.} and Li, {L. J.} and Liu, {H. L.}",

note = "Funding Information: We acknowledge financial support from the National Science Council of Republic of China under Grant No. NSC98-2112-M-003-004-MY3. ",

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T1 - Charge dynamics and electronic structures of monolayer graphene with molecular doping

AU - Shen, C. C.

AU - Lin, C. T.

AU - Li, L. J.

AU - Liu, H. L.

N1 - Funding Information: We acknowledge financial support from the National Science Council of Republic of China under Grant No. NSC98-2112-M-003-004-MY3.

PY - 2012/9/10

Y1 - 2012/9/10

N2 - THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of monolayer graphene with doping by triazine. The absorption spectrum of the triazine-doped film shows an optical excitation near 5.1 eV that is blue shifted compared with that of undoped analog. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency and a disorder-induced finite frequency peak around 155 cm -1. Drude plasma frequency (∼4400 cm -1) decreases with decreasing temperature while carrier relaxation time (∼13 fs) is almost temperature independent, implying the semiconducting behavior with thermal activation energy of 3 meV.

AB - THz absorption and spectroscopic ellipsometry were used to investigate the charge dynamics and electronic structures of monolayer graphene with doping by triazine. The absorption spectrum of the triazine-doped film shows an optical excitation near 5.1 eV that is blue shifted compared with that of undoped analog. THz conductivity displays a coherent response of itinerant charge carriers at zero frequency and a disorder-induced finite frequency peak around 155 cm -1. Drude plasma frequency (∼4400 cm -1) decreases with decreasing temperature while carrier relaxation time (∼13 fs) is almost temperature independent, implying the semiconducting behavior with thermal activation energy of 3 meV.

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Charge dynamics and electronic structures of monolayer graphene with molecular doping

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