Charge carrier transport mechanism in high-κ dielectrics and their based resistive memory cells

D. R. Islamov; V. A. Gritsenko; C. H. Cheng; A. Chin

doi:10.3103/S8756699014030169

Charge carrier transport mechanism in high-κ dielectrics and their based resistive memory cells

D. R. Islamov^*
, V. A. Gritsenko
, C. H. Cheng
, A. Chin

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Current-voltage characteristics of thin dielectric films of HfO_x in p-Si/HfO_x/Ni structures are analyzed. Experimental results are compared with various theoretical models: the Poole-Frenkel trap ionization model, the multiphonon trap ionization model, and the Schottky effect at the Ni/HfO_x interface. It is shown that in spite of the good qualitative description of the experimental results by all models, only the multiphonon trap ionization model provides a quantitative description of the data.

Original language	English
Pages (from-to)	310-314
Number of pages	5
Journal	Optoelectronics, Instrumentation and Data Processing
Volume	50
Issue number	3
DOIs	https://doi.org/10.3103/S8756699014030169
Publication status	Published - 2014 May 19

Keywords

amorphous films
hafnium oxide
high-κ dielectrics

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Electrical and Electronic Engineering

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10.3103/S8756699014030169

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@article{c40b57d9a1eb40ae8c74c1343a9da97e,

title = "Charge carrier transport mechanism in high-κ dielectrics and their based resistive memory cells",

abstract = "Current-voltage characteristics of thin dielectric films of HfOx in p-Si/HfOx/Ni structures are analyzed. Experimental results are compared with various theoretical models: the Poole-Frenkel trap ionization model, the multiphonon trap ionization model, and the Schottky effect at the Ni/HfOx interface. It is shown that in spite of the good qualitative description of the experimental results by all models, only the multiphonon trap ionization model provides a quantitative description of the data.",

keywords = "amorphous films, hafnium oxide, high-κ dielectrics",

author = "Islamov, \{D. R.\} and Gritsenko, \{V. A.\} and Cheng, \{C. H.\} and A. Chin",

note = "Publisher Copyright: {\textcopyright} 2014, Allerton Press, Inc.",

year = "2014",

month = may,

day = "19",

doi = "10.3103/S8756699014030169",

language = "English",

volume = "50",

pages = "310--314",

journal = "Optoelectronics, Instrumentation and Data Processing",

issn = "8756-6990",

publisher = "Pleiades Publishing",

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}

TY - JOUR

T1 - Charge carrier transport mechanism in high-κ dielectrics and their based resistive memory cells

AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Cheng, C. H.

AU - Chin, A.

PY - 2014/5/19

Y1 - 2014/5/19

N2 - Current-voltage characteristics of thin dielectric films of HfOx in p-Si/HfOx/Ni structures are analyzed. Experimental results are compared with various theoretical models: the Poole-Frenkel trap ionization model, the multiphonon trap ionization model, and the Schottky effect at the Ni/HfOx interface. It is shown that in spite of the good qualitative description of the experimental results by all models, only the multiphonon trap ionization model provides a quantitative description of the data.

AB - Current-voltage characteristics of thin dielectric films of HfOx in p-Si/HfOx/Ni structures are analyzed. Experimental results are compared with various theoretical models: the Poole-Frenkel trap ionization model, the multiphonon trap ionization model, and the Schottky effect at the Ni/HfOx interface. It is shown that in spite of the good qualitative description of the experimental results by all models, only the multiphonon trap ionization model provides a quantitative description of the data.

KW - amorphous films

KW - hafnium oxide

KW - high-κ dielectrics

UR - https://www.scopus.com/pages/publications/84939437489

UR - https://www.scopus.com/pages/publications/84939437489#tab=citedBy

U2 - 10.3103/S8756699014030169

DO - 10.3103/S8756699014030169

M3 - Article

AN - SCOPUS:84939437489

SN - 8756-6990

VL - 50

SP - 310

EP - 314

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

IS - 3

ER -

Charge carrier transport mechanism in high-κ dielectrics and their based resistive memory cells

Abstract

Keywords

ASJC Scopus subject areas

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