Charge carrier transport mechanism in high-κ dielectrics and their based resistive memory cells

D. R. Islamov, V. A. Gritsenko, C. H. Cheng, A. Chin

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Current-voltage characteristics of thin dielectric films of HfOx in p-Si/HfOx/Ni structures are analyzed. Experimental results are compared with various theoretical models: the Poole-Frenkel trap ionization model, the multiphonon trap ionization model, and the Schottky effect at the Ni/HfOx interface. It is shown that in spite of the good qualitative description of the experimental results by all models, only the multiphonon trap ionization model provides a quantitative description of the data.

Original languageEnglish
Pages (from-to)310-314
Number of pages5
JournalOptoelectronics, Instrumentation and Data Processing
Volume50
Issue number3
DOIs
Publication statusPublished - 2014 May 19

Keywords

  • amorphous films
  • hafnium oxide
  • high-κ dielectrics

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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