Characterization of UV-modulated dielectric constant of ZnO thin films

J. J. Chieh; Y. P. Chen; S. Y. Yang; H. E. Horng; Chin Yih Hong; H. C. Yang

Characterization of UV-modulated dielectric constant of ZnO thin films

J. J. Chieh, Y. P. Chen, S. Y. Yang, H. E. Horng, Chin Yih Hong, H. C. Yang

Research output: Contribution to journal › Article › peer-review

Abstract

The modulation on complex dielectric constant of ZnO thin film with ultraviolet (UV) light is investigated by common-path heterodyne interferometer in visible range. The results indicate that the dielectric constant of ZnO thin film is reduced under UV irradiation. The dielectric constant recovers when the UV irradiation vanishes. As the dielectric constant is related to the charge density of bounded electrons, or so-called valence electrons, the influence of UV irradiation on the resistance of ZnO thin film was studied to clarify the physical mechanism associated with the UV-modulated dielectric constant. It was observed that a smaller resistance was achieved for ZnO thin film under UV irradiation. This implies that the valence electrons absorb the irradiated UV and become conduction electrons.

Original language	English
Pages (from-to)	81-84
Number of pages	4
Journal	Optoelectronics and Advanced Materials, Rapid Communications
Volume	2
Issue number	2
Publication status	Published - 2008 Feb

Keywords

Refractive index
UV modulation
Zinc oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{103dec9493f245a2918c0ae84ccad443,

title = "Characterization of UV-modulated dielectric constant of ZnO thin films",

abstract = "The modulation on complex dielectric constant of ZnO thin film with ultraviolet (UV) light is investigated by common-path heterodyne interferometer in visible range. The results indicate that the dielectric constant of ZnO thin film is reduced under UV irradiation. The dielectric constant recovers when the UV irradiation vanishes. As the dielectric constant is related to the charge density of bounded electrons, or so-called valence electrons, the influence of UV irradiation on the resistance of ZnO thin film was studied to clarify the physical mechanism associated with the UV-modulated dielectric constant. It was observed that a smaller resistance was achieved for ZnO thin film under UV irradiation. This implies that the valence electrons absorb the irradiated UV and become conduction electrons.",

keywords = "Refractive index, UV modulation, Zinc oxide",

author = "Chieh, {J. J.} and Chen, {Y. P.} and Yang, {S. Y.} and Horng, {H. E.} and Hong, {Chin Yih} and Yang, {H. C.}",

year = "2008",

month = feb,

language = "English",

volume = "2",

pages = "81--84",

journal = "Optoelectronics and Advanced Materials, Rapid Communications",

issn = "1842-6573",

publisher = "National Institute of Optoelectronics",

number = "2",

}

TY - JOUR

T1 - Characterization of UV-modulated dielectric constant of ZnO thin films

AU - Chieh, J. J.

AU - Chen, Y. P.

AU - Yang, S. Y.

AU - Horng, H. E.

AU - Hong, Chin Yih

AU - Yang, H. C.

PY - 2008/2

Y1 - 2008/2

N2 - The modulation on complex dielectric constant of ZnO thin film with ultraviolet (UV) light is investigated by common-path heterodyne interferometer in visible range. The results indicate that the dielectric constant of ZnO thin film is reduced under UV irradiation. The dielectric constant recovers when the UV irradiation vanishes. As the dielectric constant is related to the charge density of bounded electrons, or so-called valence electrons, the influence of UV irradiation on the resistance of ZnO thin film was studied to clarify the physical mechanism associated with the UV-modulated dielectric constant. It was observed that a smaller resistance was achieved for ZnO thin film under UV irradiation. This implies that the valence electrons absorb the irradiated UV and become conduction electrons.

AB - The modulation on complex dielectric constant of ZnO thin film with ultraviolet (UV) light is investigated by common-path heterodyne interferometer in visible range. The results indicate that the dielectric constant of ZnO thin film is reduced under UV irradiation. The dielectric constant recovers when the UV irradiation vanishes. As the dielectric constant is related to the charge density of bounded electrons, or so-called valence electrons, the influence of UV irradiation on the resistance of ZnO thin film was studied to clarify the physical mechanism associated with the UV-modulated dielectric constant. It was observed that a smaller resistance was achieved for ZnO thin film under UV irradiation. This implies that the valence electrons absorb the irradiated UV and become conduction electrons.

KW - Refractive index

KW - UV modulation

KW - Zinc oxide

UR - http://www.scopus.com/inward/record.url?scp=69249107404&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=69249107404&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:69249107404

SN - 1842-6573

VL - 2

SP - 81

EP - 84

JO - Optoelectronics and Advanced Materials, Rapid Communications

JF - Optoelectronics and Advanced Materials, Rapid Communications

IS - 2

ER -

Characterization of UV-modulated dielectric constant of ZnO thin films

Abstract

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this