Characterization of UV-modulated dielectric constant of ZnO thin films

J. J. Chieh, Y. P. Chen, S. Y. Yang, H. E. Horng, Chin Yih Hong, H. C. Yang

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)


    The modulation on complex dielectric constant of ZnO thin film with ultraviolet (UV) light is investigated by common-path heterodyne interferometer in visible range. The results indicate that the dielectric constant of ZnO thin film is reduced under UV irradiation. The dielectric constant recovers when the UV irradiation vanishes. As the dielectric constant is related to the charge density of bounded electrons, or so-called valence electrons, the influence of UV irradiation on the resistance of ZnO thin film was studied to clarify the physical mechanism associated with the UV-modulated dielectric constant. It was observed that a smaller resistance was achieved for ZnO thin film under UV irradiation. This implies that the valence electrons absorb the irradiated UV and become conduction electrons.

    Original languageEnglish
    Pages (from-to)81-84
    Number of pages4
    JournalOptoelectronics and Advanced Materials, Rapid Communications
    Issue number2
    Publication statusPublished - 2008 Feb 1


    • Refractive index
    • UV modulation
    • Zinc oxide

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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