Characterization of UV-modulated dielectric constant of ZnO thin films

J. J. Chieh, Y. P. Chen, S. Y. Yang, H. E. Horng, Chin Yih Hong, H. C. Yang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The modulation on complex dielectric constant of ZnO thin film with ultraviolet (UV) light is investigated by common-path heterodyne interferometer in visible range. The results indicate that the dielectric constant of ZnO thin film is reduced under UV irradiation. The dielectric constant recovers when the UV irradiation vanishes. As the dielectric constant is related to the charge density of bounded electrons, or so-called valence electrons, the influence of UV irradiation on the resistance of ZnO thin film was studied to clarify the physical mechanism associated with the UV-modulated dielectric constant. It was observed that a smaller resistance was achieved for ZnO thin film under UV irradiation. This implies that the valence electrons absorb the irradiated UV and become conduction electrons.

Original languageEnglish
Pages (from-to)81-84
Number of pages4
JournalOptoelectronics and Advanced Materials, Rapid Communications
Volume2
Issue number2
Publication statusPublished - 2008 Feb 1

Fingerprint

Permittivity
Thin films
Irradiation
Electrons
Charge density
Interferometers
Modulation

Keywords

  • Refractive index
  • UV modulation
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Characterization of UV-modulated dielectric constant of ZnO thin films. / Chieh, J. J.; Chen, Y. P.; Yang, S. Y.; Horng, H. E.; Hong, Chin Yih; Yang, H. C.

In: Optoelectronics and Advanced Materials, Rapid Communications, Vol. 2, No. 2, 01.02.2008, p. 81-84.

Research output: Contribution to journalArticle

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AU - Yang, H. C.

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