Characterization of silicon-carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors

INIS

• alloys 100%
• carbon 100%
• carbon sources 25%
• chemical vapor deposition 25%
• control 50%
• devices 50%
• distribution 25%
• electron mobility 25%
• electrons 25%
• epitaxy 25%
• field effect transistors 100%
• heat treatments 25%
• layers 100%
• mapping 25%
• metals 100%
• mobility 50%
• oxides 100%
• processing 25%
• randomness 25%
• relaxation 25%
• scattering 25%
• semiconductor materials 100%
• silanes 25%
• silicon 100%
• silicon oxides 25%
• space 25%
• strains 50%
• substrates 50%
• surfaces 25%
• temperature range 0273-0400 k 25%
• thin films 25%
• ultrahigh vacuum 25%

Material Science

• Alloy 100%
• Characterization 100%
• Chemical Vapor Deposition 25%
• Control Component 25%
• Devices 25%
• Electron Mobility 25%
• Material 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Silane 25%
• Silicon 100%
• Strain 50%
• Strained Silicon 25%
• Surface 25%
• Temperature 50%
• Thin Films 25%
• Type Metal 75%

Engineering

• Mapping Method 25%
• Random Alloy 25%