Characterization of silicon-carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors

B. F. Hsieh, S. T. Chang, M. H. Lee

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

N type metal oxide semiconductor field effect transistors (NMOSFETs) using strained silicon-carbon alloy (Si1 - xCx) surface channels are reported in this work. Tensile-strained Si1 - xCx layers with substitutional carbon content up to ∼ 1% were epitaxially grown on (100) Si substrates by ultra-high vacuum chemical vapor deposition, using silane and methylsilane as the silicon and carbon sources, respectively. NMOSFETs were fabricated using standard MOS processing with reduced thermal treatment in order to minimize the possibility of strain relaxation. A reciprocal space mapping method was used to analyze strain distribution in the silicon-carbon alloy thin films on Si substrates. The election inversion layer mobilities of the Si1 - xCx and Si control devices at room temperature are comparable. This is in contrast to the electron mobility enhancement observed in NMOSFETs fabricated using tensile-strained Si grown on relaxed Si1 - xGex layers. At low temperatures, the electron inversion layer mobility of Si1 - xCx devices is lower than that of the Si controls, and appears to be affected by Coulomb as well as possibly by random alloy scattering. Crown

Original languageEnglish
Pages (from-to)444-448
Number of pages5
JournalThin Solid Films
Volume529
DOIs
Publication statusPublished - 2013 Feb 1

Fingerprint

MOSFET devices
Silicon
metal oxide semiconductors
Carbon
field effect transistors
Inversion layers
carbon
silicon
inversions
Silanes
Strain relaxation
control equipment
strain distribution
Electron mobility
Ultrahigh vacuum
Substrates
electron mobility
silanes
ultrahigh vacuum
Chemical vapor deposition

Keywords

  • Mobility
  • RSM
  • Silicon-carbon alloy
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Characterization of silicon-carbon alloy materials for future strained Si metal oxide semiconductor field effect transistors. / Hsieh, B. F.; Chang, S. T.; Lee, M. H.

In: Thin Solid Films, Vol. 529, 01.02.2013, p. 444-448.

Research output: Contribution to journalArticle

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AB - N type metal oxide semiconductor field effect transistors (NMOSFETs) using strained silicon-carbon alloy (Si1 - xCx) surface channels are reported in this work. Tensile-strained Si1 - xCx layers with substitutional carbon content up to ∼ 1% were epitaxially grown on (100) Si substrates by ultra-high vacuum chemical vapor deposition, using silane and methylsilane as the silicon and carbon sources, respectively. NMOSFETs were fabricated using standard MOS processing with reduced thermal treatment in order to minimize the possibility of strain relaxation. A reciprocal space mapping method was used to analyze strain distribution in the silicon-carbon alloy thin films on Si substrates. The election inversion layer mobilities of the Si1 - xCx and Si control devices at room temperature are comparable. This is in contrast to the electron mobility enhancement observed in NMOSFETs fabricated using tensile-strained Si grown on relaxed Si1 - xGex layers. At low temperatures, the electron inversion layer mobility of Si1 - xCx devices is lower than that of the Si controls, and appears to be affected by Coulomb as well as possibly by random alloy scattering. Crown

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