Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation

Shunsuke Muto; Sandip Dhara; Anindya Datta; Chi Wei Hsu; Chin Ting Wu; Ching Hsing Shen; Li Chyong Chen; Kuei Hsien Chen; Yuh Lin Wang; Tetsuo Tanabe; Tadashi Maruyama; Hong Ming Lin; Chia Chun Chen

doi:10.2320/matertrans.45.435

Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation

Shunsuke Muto^*, Sandip Dhara, Anindya Datta, Chi Wei Hsu, Chin Ting Wu, Ching Hsing Shen, Li Chyong Chen, Kuei Hsien Chen, Yuh Lin Wang, Tetsuo Tanabe, Tadashi Maruyama, Hong Ming Lin, Chia Chun Chen

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Structure of nano-domes formed by Ga⁺ ion irradiation with a focused ion beam (FIB) apparatus onto GaN nanowires (NWs) was examined with conventional transmission electron microscopy (CTEM), electron energy-loss spectroscopy (EELS) and energy-filtering TEM (EF-TEM). The nano-dome consisted of metallic gallium, covered by a GaN layer, the structure of which is amorphous or liquid. It is considered that the dome structure is formed by preferential displacement of lighter element (N) and agglomeration of heavier one (Ga). 1 MeV electron irradiation onto the sample pre-irradiated by Ga⁺ ions at a dose below the threshold for the dome formation induced the N₂ bubble formation without segregating Ga atoms, which suggests the radiation-enhanced diffusion (RED) of heavy atoms plays an important role in the nano-dome formation.

Original language	English
Pages (from-to)	435-439
Number of pages	5
Journal	Materials Transactions
Volume	45
Issue number	2
DOIs	https://doi.org/10.2320/matertrans.45.435
Publication status	Published - 2004 Feb

Keywords

Electron energy-loss spectroscopy
Energy-filtering transmission electron microscopy
GaN
Ion bombardment
Nanowires
Transmission electron microscopy

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.2320/matertrans.45.435

Cite this

@article{3f59f631e350458ba0167f9bb4eb26e0,

title = "Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation",

abstract = "Structure of nano-domes formed by Ga+ ion irradiation with a focused ion beam (FIB) apparatus onto GaN nanowires (NWs) was examined with conventional transmission electron microscopy (CTEM), electron energy-loss spectroscopy (EELS) and energy-filtering TEM (EF-TEM). The nano-dome consisted of metallic gallium, covered by a GaN layer, the structure of which is amorphous or liquid. It is considered that the dome structure is formed by preferential displacement of lighter element (N) and agglomeration of heavier one (Ga). 1 MeV electron irradiation onto the sample pre-irradiated by Ga+ ions at a dose below the threshold for the dome formation induced the N2 bubble formation without segregating Ga atoms, which suggests the radiation-enhanced diffusion (RED) of heavy atoms plays an important role in the nano-dome formation.",

keywords = "Electron energy-loss spectroscopy, Energy-filtering transmission electron microscopy, GaN, Ion bombardment, Nanowires, Transmission electron microscopy",

author = "Shunsuke Muto and Sandip Dhara and Anindya Datta and Hsu, {Chi Wei} and Wu, {Chin Ting} and Shen, {Ching Hsing} and Chen, {Li Chyong} and Chen, {Kuei Hsien} and Wang, {Yuh Lin} and Tetsuo Tanabe and Tadashi Maruyama and Lin, {Hong Ming} and Chen, {Chia Chun}",

year = "2004",

month = feb,

doi = "10.2320/matertrans.45.435",

language = "English",

volume = "45",

pages = "435--439",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "Japan Institute of Metals (JIM)",

number = "2",

}

TY - JOUR

T1 - Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation

AU - Muto, Shunsuke

AU - Dhara, Sandip

AU - Datta, Anindya

AU - Hsu, Chi Wei

AU - Wu, Chin Ting

AU - Shen, Ching Hsing

AU - Chen, Li Chyong

AU - Chen, Kuei Hsien

AU - Wang, Yuh Lin

AU - Tanabe, Tetsuo

AU - Maruyama, Tadashi

AU - Lin, Hong Ming

AU - Chen, Chia Chun

PY - 2004/2

Y1 - 2004/2

N2 - Structure of nano-domes formed by Ga+ ion irradiation with a focused ion beam (FIB) apparatus onto GaN nanowires (NWs) was examined with conventional transmission electron microscopy (CTEM), electron energy-loss spectroscopy (EELS) and energy-filtering TEM (EF-TEM). The nano-dome consisted of metallic gallium, covered by a GaN layer, the structure of which is amorphous or liquid. It is considered that the dome structure is formed by preferential displacement of lighter element (N) and agglomeration of heavier one (Ga). 1 MeV electron irradiation onto the sample pre-irradiated by Ga+ ions at a dose below the threshold for the dome formation induced the N2 bubble formation without segregating Ga atoms, which suggests the radiation-enhanced diffusion (RED) of heavy atoms plays an important role in the nano-dome formation.

AB - Structure of nano-domes formed by Ga+ ion irradiation with a focused ion beam (FIB) apparatus onto GaN nanowires (NWs) was examined with conventional transmission electron microscopy (CTEM), electron energy-loss spectroscopy (EELS) and energy-filtering TEM (EF-TEM). The nano-dome consisted of metallic gallium, covered by a GaN layer, the structure of which is amorphous or liquid. It is considered that the dome structure is formed by preferential displacement of lighter element (N) and agglomeration of heavier one (Ga). 1 MeV electron irradiation onto the sample pre-irradiated by Ga+ ions at a dose below the threshold for the dome formation induced the N2 bubble formation without segregating Ga atoms, which suggests the radiation-enhanced diffusion (RED) of heavy atoms plays an important role in the nano-dome formation.

KW - Electron energy-loss spectroscopy

KW - Energy-filtering transmission electron microscopy

KW - GaN

KW - Ion bombardment

KW - Nanowires

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=11144357306&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11144357306&partnerID=8YFLogxK

U2 - 10.2320/matertrans.45.435

DO - 10.2320/matertrans.45.435

M3 - Article

AN - SCOPUS:11144357306

SN - 1345-9678

VL - 45

SP - 435

EP - 439

JO - Materials Transactions

JF - Materials Transactions

IS - 2

ER -

Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this