Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation

Shunsuke Muto, Sandip Dhara, Anindya Datta, Chi Wei Hsu, Chin Ting Wu, Ching Hsing Shen, Li Chyong Chen, Kuei Hsien Chen, Yuh Lin Wang, Tetsuo Tanabe, Tadashi Maruyama, Hong Ming Lin, Chia Chun Chen

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Structure of nano-domes formed by Ga+ ion irradiation with a focused ion beam (FIB) apparatus onto GaN nanowires (NWs) was examined with conventional transmission electron microscopy (CTEM), electron energy-loss spectroscopy (EELS) and energy-filtering TEM (EF-TEM). The nano-dome consisted of metallic gallium, covered by a GaN layer, the structure of which is amorphous or liquid. It is considered that the dome structure is formed by preferential displacement of lighter element (N) and agglomeration of heavier one (Ga). 1 MeV electron irradiation onto the sample pre-irradiated by Ga+ ions at a dose below the threshold for the dome formation induced the N2 bubble formation without segregating Ga atoms, which suggests the radiation-enhanced diffusion (RED) of heavy atoms plays an important role in the nano-dome formation.

Original languageEnglish
Pages (from-to)435-439
Number of pages5
JournalMaterials Transactions
Volume45
Issue number2
DOIs
Publication statusPublished - 2004 Jan 1

Fingerprint

Domes
Ion bombardment
domes
ion irradiation
Nanowires
nanowires
Transmission electron microscopy
Bubble formation
Atoms
transmission electron microscopy
Gallium
Electron irradiation
Electron energy loss spectroscopy
Focused ion beams
electron irradiation
agglomeration
gallium
atoms
bubbles
Agglomeration

Keywords

  • Electron energy-loss spectroscopy
  • Energy-filtering transmission electron microscopy
  • GaN
  • Ion bombardment
  • Nanowires
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation. / Muto, Shunsuke; Dhara, Sandip; Datta, Anindya; Hsu, Chi Wei; Wu, Chin Ting; Shen, Ching Hsing; Chen, Li Chyong; Chen, Kuei Hsien; Wang, Yuh Lin; Tanabe, Tetsuo; Maruyama, Tadashi; Lin, Hong Ming; Chen, Chia Chun.

In: Materials Transactions, Vol. 45, No. 2, 01.01.2004, p. 435-439.

Research output: Contribution to journalArticle

Muto, S, Dhara, S, Datta, A, Hsu, CW, Wu, CT, Shen, CH, Chen, LC, Chen, KH, Wang, YL, Tanabe, T, Maruyama, T, Lin, HM & Chen, CC 2004, 'Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation', Materials Transactions, vol. 45, no. 2, pp. 435-439. https://doi.org/10.2320/matertrans.45.435
Muto, Shunsuke ; Dhara, Sandip ; Datta, Anindya ; Hsu, Chi Wei ; Wu, Chin Ting ; Shen, Ching Hsing ; Chen, Li Chyong ; Chen, Kuei Hsien ; Wang, Yuh Lin ; Tanabe, Tetsuo ; Maruyama, Tadashi ; Lin, Hong Ming ; Chen, Chia Chun. / Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation. In: Materials Transactions. 2004 ; Vol. 45, No. 2. pp. 435-439.
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