Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation

Shunsuke Muto, Sandip Dhara, Anindya Datta, Chi Wei Hsu, Chin Ting Wu, Ching Hsing Shen, Li Chyong Chen, Kuei Hsien Chen, Yuh Lin Wang, Tetsuo Tanabe, Tadashi Maruyama, Hong Ming Lin, Chia Chun Chen

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Abstract

Structure of nano-domes formed by Ga+ ion irradiation with a focused ion beam (FIB) apparatus onto GaN nanowires (NWs) was examined with conventional transmission electron microscopy (CTEM), electron energy-loss spectroscopy (EELS) and energy-filtering TEM (EF-TEM). The nano-dome consisted of metallic gallium, covered by a GaN layer, the structure of which is amorphous or liquid. It is considered that the dome structure is formed by preferential displacement of lighter element (N) and agglomeration of heavier one (Ga). 1 MeV electron irradiation onto the sample pre-irradiated by Ga+ ions at a dose below the threshold for the dome formation induced the N2 bubble formation without segregating Ga atoms, which suggests the radiation-enhanced diffusion (RED) of heavy atoms plays an important role in the nano-dome formation.

Original languageEnglish
Pages (from-to)435-439
Number of pages5
JournalMaterials Transactions
Volume45
Issue number2
DOIs
Publication statusPublished - 2004 Feb

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Keywords

  • Electron energy-loss spectroscopy
  • Energy-filtering transmission electron microscopy
  • GaN
  • Ion bombardment
  • Nanowires
  • Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Muto, S., Dhara, S., Datta, A., Hsu, C. W., Wu, C. T., Shen, C. H., Chen, L. C., Chen, K. H., Wang, Y. L., Tanabe, T., Maruyama, T., Lin, H. M., & Chen, C. C. (2004). Characterization of Nanodome on GaN Nanowires Formed with Ga Ion Irradiation. Materials Transactions, 45(2), 435-439. https://doi.org/10.2320/matertrans.45.435