Characterization of grain boundaries in YBa2Cu3Oy bicrystal junctions

Hsiao-Wen Yu Hsiao-Wen, Ming Jye Chen, Hong-Chang Yang, Shieh-Yueh Yang, Herng-Er Horng

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    I-V, V-O characteristics and atomic force images of grain boundary Josephson junctions fabricated on SrTiO, bicrystal substrates were investigated. The half integer Shapiro steps and I, versus B curves show evidence of the inhomogeneous current distribution along the grain boundary junction. The dc SQUID formed on the grain boundary shows the expected V-O curve. The AFM images, R-T curves and IeRn product reveal sequential destructive deterioration of the junction originating from the underlying grooved substrate. The results are discussed.

    Original languageEnglish
    Pages (from-to)3101-3104
    Number of pages4
    JournalIEEE Transactions on Applied Superconductivity
    Volume9
    Issue number2 PART 3
    DOIs
    Publication statusPublished - 1999 Dec 1

    Fingerprint

    Bicrystals
    bicrystals
    Grain boundaries
    grain boundaries
    curves
    SQUIDs
    Substrates
    current distribution
    deterioration
    Josephson junctions
    integers
    Deterioration
    atomic force microscopy
    products

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

    Cite this

    Characterization of grain boundaries in YBa2Cu3Oy bicrystal junctions. / Yu Hsiao-Wen, Hsiao-Wen; Chen, Ming Jye; Yang, Hong-Chang; Yang, Shieh-Yueh; Horng, Herng-Er.

    In: IEEE Transactions on Applied Superconductivity, Vol. 9, No. 2 PART 3, 01.12.1999, p. 3101-3104.

    Research output: Contribution to journalArticle

    Yu Hsiao-Wen, Hsiao-Wen ; Chen, Ming Jye ; Yang, Hong-Chang ; Yang, Shieh-Yueh ; Horng, Herng-Er. / Characterization of grain boundaries in YBa2Cu3Oy bicrystal junctions. In: IEEE Transactions on Applied Superconductivity. 1999 ; Vol. 9, No. 2 PART 3. pp. 3101-3104.
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