Characterization of Double HfZrO2based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Z. F. Lou; C. Y. Liao; K. Y. Hsiang; C. Y. Lin; Y. D. Lin; P. C. Yeh; C. Y. Wang; H. Y. Yang; P. J. Tzeng; T. H. Hou; Y. T. Tang; M. H. Lee

doi:10.1109/VLSI-TSA54299.2022.9771012

Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Z. F. Lou, C. Y. Liao, K. Y. Hsiang, C. Y. Lin, Y. D. Lin, P. C. Yeh, C. Y. Wang, H. Y. Yang, P. J. Tzeng, T. H. Hou, Y. T. Tang^*, M. H. Lee^*

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

Original language	English
Title of host publication	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9771012
Publication status	Published - 2022
Event	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan Duration: 2022 Apr 18 → 2022 Apr 21

Publication series

Name	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/Territory	Taiwan
City	Hsinchu
Period	2022/04/18 → 2022/04/21

Keywords

Double HZO
FeFET
ferroelectric

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Computer Science Applications
Hardware and Architecture
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/VLSI-TSA54299.2022.9771012

Cite this

Lou, Z. F., Liao, C. Y., Hsiang, K. Y., Lin, C. Y., Lin, Y. D., Yeh, P. C., Wang, C. Y., Yang, H. Y., Tzeng, P. J., Hou, T. H., Tang, Y. T., & Lee, M. H. (2022). Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9771012

Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. / Lou, Z. F.; Liao, C. Y.; Hsiang, K. Y. et al.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lou, ZF, Liao, CY, Hsiang, KY, Lin, CY, Lin, YD, Yeh, PC, Wang, CY, Yang, HY, Tzeng, PJ, Hou, TH, Tang, YT & Lee, MH 2022, Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. in 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, Taiwan, 2022/04/18. https://doi.org/10.1109/VLSI-TSA54299.2022.9771012

Lou ZF, Liao CY, Hsiang KY, Lin CY, Lin YD, Yeh PC et al. Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9771012

Lou, Z. F. ; Liao, C. Y. ; Hsiang, K. Y. et al. / Characterization of Double HfZrO₂based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

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abstract = "A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.",

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AU - Yeh, P. C.

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N2 - A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

AB - A double HfZrO2 (HZO) ferroelectric field-effect transistor (FeFET) is demonstrated with ultra-low operating voltage as |VP/E| = 3 V to achieve multilevel cell (MLC) nonvolatile memory (NVM). Compared to a single FE-HZO FeFET, the metal/ferroelectric/metal/ferroelectric/Si (MFMFS) structure results not only in a reduction of VP/E, but also provides a feasible memory window (MW) of 1.9 V for MLC operation. In addition, the metal/ferroelectric/insulator/ ferroelectric/Si (MFIFS) FeFET exhibits a MW as high as >2.5 V. The double HZO FeFET has potential to improve power consumption and enhance memory density for MLC-NVM applications.

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