Characterization of directly coupled dual-superconducting quantum interference device magnetometer

C. H. Wu; J. H. Chen; F. J. Jhan; J. T. Jeng; H. C. Yang

doi:10.1063/1.2990069

Characterization of directly coupled dual-superconducting quantum interference device magnetometer

C. H. Wu, J. H. Chen, F. J. Jhan, J. T. Jeng, H. C. Yang

Graduate Institute of Electro-Optical Science And Technology

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

The effect on effective area and voltage modulation depth of a serial superconducting quantum interference device (SQUID) magnetometer was simulated and observed. The variation in the effective area with the number N of serial SQUIDs was simulated. To reduce the beat phenomenon and optimize the serial SQUID magnetometer, the distance x between two adjacent SQUIDs should exceed 40 μm or even 65 μm, or dummy SQUIDs should be added at the edge of the serial SQUIDs. The optimal layout of a high- Tc serial SQUID array is discussed.

Original language	English
Article number	074504
Journal	Journal of Applied Physics
Volume	104
Issue number	7
DOIs	https://doi.org/10.1063/1.2990069
Publication status	Published - 2008 Oct 22

Fingerprint

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Wu, C. H., Chen, J. H., Jhan, F. J., Jeng, J. T., & Yang, H. C. (2008). Characterization of directly coupled dual-superconducting quantum interference device magnetometer. Journal of Applied Physics, 104(7), [074504]. https://doi.org/10.1063/1.2990069

@article{3b4638f3fd4b4fb596b42fc11e67fcda,

title = "Characterization of directly coupled dual-superconducting quantum interference device magnetometer",

abstract = "The effect on effective area and voltage modulation depth of a serial superconducting quantum interference device (SQUID) magnetometer was simulated and observed. The variation in the effective area with the number N of serial SQUIDs was simulated. To reduce the beat phenomenon and optimize the serial SQUID magnetometer, the distance x between two adjacent SQUIDs should exceed 40 μm or even 65 μm, or dummy SQUIDs should be added at the edge of the serial SQUIDs. The optimal layout of a high- Tc serial SQUID array is discussed.",

author = "Wu, {C. H.} and Chen, {J. H.} and Jhan, {F. J.} and Jeng, {J. T.} and Yang, {H. C.}",

year = "2008",

month = oct

day = "22",

doi = "10.1063/1.2990069",

language = "English",

volume = "104",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Characterization of directly coupled dual-superconducting quantum interference device magnetometer

AU - Wu, C. H.

AU - Chen, J. H.

AU - Jhan, F. J.

AU - Jeng, J. T.

AU - Yang, H. C.

PY - 2008/10/22

Y1 - 2008/10/22

N2 - The effect on effective area and voltage modulation depth of a serial superconducting quantum interference device (SQUID) magnetometer was simulated and observed. The variation in the effective area with the number N of serial SQUIDs was simulated. To reduce the beat phenomenon and optimize the serial SQUID magnetometer, the distance x between two adjacent SQUIDs should exceed 40 μm or even 65 μm, or dummy SQUIDs should be added at the edge of the serial SQUIDs. The optimal layout of a high- Tc serial SQUID array is discussed.

AB - The effect on effective area and voltage modulation depth of a serial superconducting quantum interference device (SQUID) magnetometer was simulated and observed. The variation in the effective area with the number N of serial SQUIDs was simulated. To reduce the beat phenomenon and optimize the serial SQUID magnetometer, the distance x between two adjacent SQUIDs should exceed 40 μm or even 65 μm, or dummy SQUIDs should be added at the edge of the serial SQUIDs. The optimal layout of a high- Tc serial SQUID array is discussed.

UR - http://www.scopus.com/inward/record.url?scp=54049115905&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54049115905&partnerID=8YFLogxK

U2 - 10.1063/1.2990069

DO - 10.1063/1.2990069

M3 - Article

AN - SCOPUS:54049115905

VL - 104

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 074504

ER -

Access to Document

10.1063/1.2990069