Characteristics of low-resistivity aluminum-doped zinc oxide films deposited at room temperature by off-axis radio-frequency sputtering on flexible plastic substrates

Li Min Wang, Chih Yi Wang, Ciao Ren Jheng, Syu Jhan Wu, Chen Kai Sai, Ya-Ju Lee, Ching Yu Chiang, Bor Yuan Shew

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The crystalline structure, morphology, composition, electrical transport, and optical properties of aluminum-doped zinc oxide (AZO) films are studied for applications in transparent electronics and optoelectronic devices. AZO thin films of c-axis-oriented growth and with different thickness were deposited on PET flexible plastic substrates at room temperature by rf magnetron sputtering. A larger grain size with a decreased strain ε value is observed in a thicker film, while changes in composition for films with different thicknesses are insignificant. Moreover, the resistivity of film decreases with increasing thickness, and the low-temperature electrical transport properties can be described by the scenario of quantum corrections to conductivity. With the room-temperature growth conditions, the resistivity of 4.5 × 10 −4  Ω cm, carrier concentration of 6.4 × 10 20  cm −3 , and transmittance of 80 % for the 1100-nm-thick film are obtained. In addition, the optical bandgap energy decreases with increasing film thickness, which can be attributed to the bandgap renormalization and crystallite size effects.

Original languageEnglish
Article number731
JournalApplied Physics A: Materials Science and Processing
Issue number8
Publication statusPublished - 2016 Aug 1


ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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