@inproceedings{8cba22e15e7a4d75a3edb511ffce6bb8,
title = "Characteristics of In-Ge-Sb-Sn-Te thin film used for phase change optical recording media",
abstract = "The In10GexSb52-xSn23Te 15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In 10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn 23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb 52-xSn23Te15 films with x = 2∼9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.",
keywords = "In-Ge-Sb-Sn-Te, Phase change optical recording, Thin film",
author = "Ou, {Sin Liang} and Cheng, {Chin Pao} and Yeh, {Chin Yen} and Chung, {Chung Jen} and Kao, {Kuo Sheng} and Lin, {Re Ching}",
year = "2011",
doi = "10.4028/www.scientific.net/AMR.189-193.4430",
language = "English",
isbn = "9783037850312",
series = "Advanced Materials Research",
pages = "4430--4433",
booktitle = "Manufacturing Process Technology",
note = "2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011 ; Conference date: 09-04-2011 Through 11-04-2011",
}