TY - GEN
T1 - Characteristics of In-Ge-Sb-Sn-Te thin film used for phase change optical recording media
AU - Ou, Sin Liang
AU - Cheng, Chin-Pao
AU - Yeh, Chin Yen
AU - Chung, Chung Jen
AU - Kao, Kuo Sheng
AU - Lin, Re Ching
PY - 2011
Y1 - 2011
N2 - The In10GexSb52-xSn23Te 15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In 10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn 23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb 52-xSn23Te15 films with x = 2∼9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.
AB - The In10GexSb52-xSn23Te 15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In 10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn 23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb 52-xSn23Te15 films with x = 2∼9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.
KW - In-Ge-Sb-Sn-Te
KW - Phase change optical recording
KW - Thin film
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U2 - 10.4028/www.scientific.net/AMR.189-193.4430
DO - 10.4028/www.scientific.net/AMR.189-193.4430
M3 - Conference contribution
AN - SCOPUS:79952498668
SN - 9783037850312
T3 - Advanced Materials Research
SP - 4430
EP - 4433
BT - Manufacturing Process Technology
T2 - 2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011
Y2 - 9 April 2011 through 11 April 2011
ER -