Characteristics of In-Ge-Sb-Sn-Te thin film used for phase change optical recording media

Sin Liang Ou; Chin-Pao Cheng; Chin Yen Yeh; Chung Jen Chung; Kuo Sheng Kao; Re Ching Lin

doi:10.4028/www.scientific.net/AMR.189-193.4430

Characteristics of In-Ge-Sb-Sn-Te thin film used for phase change optical recording media

Sin Liang Ou, Chin-Pao Cheng, Chin Yen Yeh, Chung Jen Chung, Kuo Sheng Kao, Re Ching Lin

Department of Mechartronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

The In₁₀Ge_xSb_52-xSn₂₃Te ₁₅ films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO₂ films were used as protective layers. The thickness of the In ₁₀Ge_xSb_52-xSn₂₃Te₁₅ film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In₁₀Ge_xSb_52-xSn ₂₃Te₁₅ (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In₁₀Ge_xSb _52-xSn₂₃Te₁₅ films with x = 2∼9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.

Original language	English
Title of host publication	Manufacturing Process Technology
Pages	4430-4433
Number of pages	4
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.189-193.4430
Publication status	Published - 2011 Mar 16
Event	2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011 - Guilin, China Duration: 2011 Apr 9 → 2011 Apr 11

Publication series

Name	Advanced Materials Research
Volume	189-193
ISSN (Print)	1022-6680

Other

Other	2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011
Country	China
City	Guilin
Period	2011/04/09 → 2011/04/11

Keywords

In-Ge-Sb-Sn-Te
Phase change optical recording
Thin film

ASJC Scopus subject areas

Engineering(all)

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Characteristics of In-Ge-Sb-Sn-Te thin film used for phase change optical recording media. / Ou, Sin Liang; Cheng, Chin-Pao; Yeh, Chin Yen; Chung, Chung Jen; Kao, Kuo Sheng; Lin, Re Ching.

Manufacturing Process Technology. 2011. p. 4430-4433 (Advanced Materials Research; Vol. 189-193).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ou, SL, Cheng, C-P, Yeh, CY, Chung, CJ, Kao, KS & Lin, RC 2011, Characteristics of In-Ge-Sb-Sn-Te thin film used for phase change optical recording media. in Manufacturing Process Technology. Advanced Materials Research, vol. 189-193, pp. 4430-4433, 2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011, Guilin, China, 2011/04/09. https://doi.org/10.4028/www.scientific.net/AMR.189-193.4430

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title = "Characteristics of In-Ge-Sb-Sn-Te thin film used for phase change optical recording media",

abstract = "The In10GexSb52-xSn23Te 15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In 10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn 23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb 52-xSn23Te15 films with x = 2∼9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.",

keywords = "In-Ge-Sb-Sn-Te, Phase change optical recording, Thin film",

author = "Ou, {Sin Liang} and Chin-Pao Cheng and Yeh, {Chin Yen} and Chung, {Chung Jen} and Kao, {Kuo Sheng} and Lin, {Re Ching}",

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AU - Ou, Sin Liang

AU - Cheng, Chin-Pao

AU - Yeh, Chin Yen

AU - Chung, Chung Jen

AU - Kao, Kuo Sheng

AU - Lin, Re Ching

PY - 2011/3/16

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N2 - The In10GexSb52-xSn23Te 15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In 10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn 23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb 52-xSn23Te15 films with x = 2∼9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.

AB - The In10GexSb52-xSn23Te 15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In 10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn 23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb 52-xSn23Te15 films with x = 2∼9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.

KW - In-Ge-Sb-Sn-Te

KW - Phase change optical recording

KW - Thin film

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