Characteristics of In-Ge-Sb-Sn-Te thin film used for phase change optical recording media

Sin Liang Ou, Chin-Pao Cheng, Chin Yen Yeh, Chung Jen Chung, Kuo Sheng Kao, Re Ching Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The In10GexSb52-xSn23Te 15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In 10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn 23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb 52-xSn23Te15 films with x = 2∼9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.

Original languageEnglish
Title of host publicationManufacturing Process Technology
Pages4430-4433
Number of pages4
DOIs
Publication statusPublished - 2011 Mar 16
Event2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011 - Guilin, China
Duration: 2011 Apr 92011 Apr 11

Publication series

NameAdvanced Materials Research
Volume189-193
ISSN (Print)1022-6680

Other

Other2nd International Conference on Manufacturing Science and Engineering, ICMSE 2011
CountryChina
CityGuilin
Period11/4/911/4/11

Keywords

  • In-Ge-Sb-Sn-Te
  • Phase change optical recording
  • Thin film

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Ou, S. L., Cheng, C-P., Yeh, C. Y., Chung, C. J., Kao, K. S., & Lin, R. C. (2011). Characteristics of In-Ge-Sb-Sn-Te thin film used for phase change optical recording media. In Manufacturing Process Technology (pp. 4430-4433). (Advanced Materials Research; Vol. 189-193). https://doi.org/10.4028/www.scientific.net/AMR.189-193.4430