Characteristics of high-Tc josephson junction fabricated by focused ION beam and ION damage

Chiu Hsien Wu; Wei Cheng Kuo; Yu Te Chou; Jau Han Chen; Hong Chang Yang

doi:10.1109/TASC.2009.2018366

Characteristics of high-T_c josephson junction fabricated by focused ION beam and ION damage

Chiu Hsien Wu^*
, Wei Cheng Kuo
, Yu Te Chou
, Jau Han Chen
, Hong Chang Yang

^*Corresponding author for this work

Institute and Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A high-T_c Josephson junction and superconducting quantum interference devices (SQUIDs) were fabricated by focused ion beam (FIB) milling and 150 keV oxygen ion implantation. A single layer gold mask with a small aperture of 28-73 nm defined by direct milling with FIB, was used. The voltage versus current characteristics of high-T_c YBa₂Cu ₃O_7-x Josephson junctions were measured under microwaves. Shapiro steps were observed in the single junction. The voltage versus current and voltage versus magnetic field characteristics of a SQUID were measured.

Original language	English
Article number	5153032
Pages (from-to)	210-213
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	19
Issue number	3
DOIs	https://doi.org/10.1109/TASC.2009.2018366
Publication status	Published - 2009 Jun

Keywords

Focused ion beam
Ion implantation
Josephson junction
SQUID

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/TASC.2009.2018366

Cite this

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title = "Characteristics of high-Tc josephson junction fabricated by focused ION beam and ION damage",

abstract = "A high-Tc Josephson junction and superconducting quantum interference devices (SQUIDs) were fabricated by focused ion beam (FIB) milling and 150 keV oxygen ion implantation. A single layer gold mask with a small aperture of 28-73 nm defined by direct milling with FIB, was used. The voltage versus current characteristics of high-Tc YBa2Cu 3O7-x Josephson junctions were measured under microwaves. Shapiro steps were observed in the single junction. The voltage versus current and voltage versus magnetic field characteristics of a SQUID were measured.",

keywords = "Focused ion beam, Ion implantation, Josephson junction, SQUID",

author = "Wu, \{Chiu Hsien\} and Kuo, \{Wei Cheng\} and Chou, \{Yu Te\} and Chen, \{Jau Han\} and Yang, \{Hong Chang\}",

note = "Funding Information: Manuscript received August 26, 2008. First published June 30, 2009; current version published July 10, 2009. This work was supported by the National Science Council of Taiwan (NSC95-2112-M005-016-MY3). C.-H. Wu is with the Department of Physics, National Chung Hsing University, Taichung 40227 Taiwan (e-mail: [email protected]). W.-C. Kuo and Y.-T. Chou were with Tunghai University, Taichung 40704 Taiwan. J.-H. Chen is with the Department of Electrical Engineering, Da-Yeh University, Changhwa 51591 Taiwan. H.-C. Yang is with the Department of Physics, National Taiwan University, Taipei 10617 Taiwan. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TASC.2009.2018366",

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AU - Yang, Hong Chang

N1 - Funding Information: Manuscript received August 26, 2008. First published June 30, 2009; current version published July 10, 2009. This work was supported by the National Science Council of Taiwan (NSC95-2112-M005-016-MY3). C.-H. Wu is with the Department of Physics, National Chung Hsing University, Taichung 40227 Taiwan (e-mail: [email protected]). W.-C. Kuo and Y.-T. Chou were with Tunghai University, Taichung 40704 Taiwan. J.-H. Chen is with the Department of Electrical Engineering, Da-Yeh University, Changhwa 51591 Taiwan. H.-C. Yang is with the Department of Physics, National Taiwan University, Taipei 10617 Taiwan. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TASC.2009.2018366

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