Characteristics of cerium oxide for metal-insulator-metal capacitors

Chun-Hu Cheng, H. H. Hsu, W. B. Chen, Albert Chin, F. S. Yeh

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this article, we describe our successful fabrication of a Ce O 2 metal-insulator-metal (MIM) capacitor with a low voltage nonlinearity. A low leakage current of 3.9× 10-7 A/ cm 2 at -1 V and a small VCC-α∼421 ppm/ V 2 were obtained at a high 10.8 fF/μ m2 density for a Pt/Ce O2 /TaN MIM capacitor. The small VCC-α for a 15 nm thick Ce O2 dielectric (κ∼20) was much better than the reported dielectrics of Hf O2, Tb-Hf O2, and Al2 O 3 -Hf O2 at a similar κ -value (15-20). The good analog performance was due to the combined effect of the Ce O2 dielectric and the high work-function metals.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume13
Issue number1
DOIs
Publication statusPublished - 2009 Nov 26

Fingerprint

cerium oxides
Cerium
capacitors
Capacitors
Metals
insulators
Oxides
metals
Leakage currents
low voltage
leakage
nonlinearity
ceric oxide
analogs
Fabrication
fabrication
Electric potential

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Characteristics of cerium oxide for metal-insulator-metal capacitors. / Cheng, Chun-Hu; Hsu, H. H.; Chen, W. B.; Chin, Albert; Yeh, F. S.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 1, 26.11.2009.

Research output: Contribution to journalArticle

Cheng, Chun-Hu ; Hsu, H. H. ; Chen, W. B. ; Chin, Albert ; Yeh, F. S. / Characteristics of cerium oxide for metal-insulator-metal capacitors. In: Electrochemical and Solid-State Letters. 2009 ; Vol. 13, No. 1.
@article{0d38d06889734e41984b132778dcdde2,
title = "Characteristics of cerium oxide for metal-insulator-metal capacitors",
abstract = "In this article, we describe our successful fabrication of a Ce O 2 metal-insulator-metal (MIM) capacitor with a low voltage nonlinearity. A low leakage current of 3.9× 10-7 A/ cm 2 at -1 V and a small VCC-α∼421 ppm/ V 2 were obtained at a high 10.8 fF/μ m2 density for a Pt/Ce O2 /TaN MIM capacitor. The small VCC-α for a 15 nm thick Ce O2 dielectric (κ∼20) was much better than the reported dielectrics of Hf O2, Tb-Hf O2, and Al2 O 3 -Hf O2 at a similar κ -value (15-20). The good analog performance was due to the combined effect of the Ce O2 dielectric and the high work-function metals.",
author = "Chun-Hu Cheng and Hsu, {H. H.} and Chen, {W. B.} and Albert Chin and Yeh, {F. S.}",
year = "2009",
month = "11",
day = "26",
doi = "10.1149/1.3258042",
language = "English",
volume = "13",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "1",

}

TY - JOUR

T1 - Characteristics of cerium oxide for metal-insulator-metal capacitors

AU - Cheng, Chun-Hu

AU - Hsu, H. H.

AU - Chen, W. B.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2009/11/26

Y1 - 2009/11/26

N2 - In this article, we describe our successful fabrication of a Ce O 2 metal-insulator-metal (MIM) capacitor with a low voltage nonlinearity. A low leakage current of 3.9× 10-7 A/ cm 2 at -1 V and a small VCC-α∼421 ppm/ V 2 were obtained at a high 10.8 fF/μ m2 density for a Pt/Ce O2 /TaN MIM capacitor. The small VCC-α for a 15 nm thick Ce O2 dielectric (κ∼20) was much better than the reported dielectrics of Hf O2, Tb-Hf O2, and Al2 O 3 -Hf O2 at a similar κ -value (15-20). The good analog performance was due to the combined effect of the Ce O2 dielectric and the high work-function metals.

AB - In this article, we describe our successful fabrication of a Ce O 2 metal-insulator-metal (MIM) capacitor with a low voltage nonlinearity. A low leakage current of 3.9× 10-7 A/ cm 2 at -1 V and a small VCC-α∼421 ppm/ V 2 were obtained at a high 10.8 fF/μ m2 density for a Pt/Ce O2 /TaN MIM capacitor. The small VCC-α for a 15 nm thick Ce O2 dielectric (κ∼20) was much better than the reported dielectrics of Hf O2, Tb-Hf O2, and Al2 O 3 -Hf O2 at a similar κ -value (15-20). The good analog performance was due to the combined effect of the Ce O2 dielectric and the high work-function metals.

UR - http://www.scopus.com/inward/record.url?scp=70450200549&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70450200549&partnerID=8YFLogxK

U2 - 10.1149/1.3258042

DO - 10.1149/1.3258042

M3 - Article

VL - 13

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 1

ER -