Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate

Tian Li Wu*, Chih Fang Huang, Chun Hu Cheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution


This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.

Original languageEnglish
Title of host publicationWide Bandgap Semiconductor Materials and Devices 12
PublisherElectrochemical Society Inc.
Number of pages11
ISBN (Electronic)9781607682172
ISBN (Print)9781566778671
Publication statusPublished - 2011
Externally publishedYes

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • General Engineering


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