Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate

Tian Li Wu, Chih Fang Huang, Chun-Hu Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.

Original languageEnglish
Title of host publicationWide Bandgap Semiconductor Materials and Devices 12
Pages173-183
Number of pages11
Volume35
Edition6
DOIs
Publication statusPublished - 2011 Aug 1
EventWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 2011 May 12011 May 6

Other

OtherWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period11/5/111/5/6

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Wu, T. L., Huang, C. F., & Cheng, C-H. (2011). Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate. In Wide Bandgap Semiconductor Materials and Devices 12 (6 ed., Vol. 35, pp. 173-183) https://doi.org/10.1149/1.3570859

Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate. / Wu, Tian Li; Huang, Chih Fang; Cheng, Chun-Hu.

Wide Bandgap Semiconductor Materials and Devices 12. Vol. 35 6. ed. 2011. p. 173-183.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wu, TL, Huang, CF & Cheng, C-H 2011, Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate. in Wide Bandgap Semiconductor Materials and Devices 12. 6 edn, vol. 35, pp. 173-183, Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting, Montreal, QC, Canada, 11/5/1. https://doi.org/10.1149/1.3570859
Wu TL, Huang CF, Cheng C-H. Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate. In Wide Bandgap Semiconductor Materials and Devices 12. 6 ed. Vol. 35. 2011. p. 173-183 https://doi.org/10.1149/1.3570859
Wu, Tian Li ; Huang, Chih Fang ; Cheng, Chun-Hu. / Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate. Wide Bandgap Semiconductor Materials and Devices 12. Vol. 35 6. ed. 2011. pp. 173-183
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