Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate

Tian Li Wu, Chih Fang Huang, Chun Hu Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.

Original languageEnglish
Title of host publicationWide Bandgap Semiconductor Materials and Devices 12
Pages173-183
Number of pages11
Edition6
DOIs
Publication statusPublished - 2011 Aug 1
EventWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 2011 May 12011 May 6

Publication series

NameECS Transactions
Number6
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherWide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period11/5/111/5/6

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Wu, T. L., Huang, C. F., & Cheng, C. H. (2011). Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate. In Wide Bandgap Semiconductor Materials and Devices 12 (6 ed., pp. 173-183). (ECS Transactions; Vol. 35, No. 6). https://doi.org/10.1149/1.3570859