Abstract
This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.
| Original language | English |
|---|---|
| Title of host publication | Wide Bandgap Semiconductor Materials and Devices 12 |
| Pages | 173-183 |
| Number of pages | 11 |
| Volume | 35 |
| Edition | 6 |
| DOIs | |
| Publication status | Published - 2011 Aug 1 |
| Event | Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, Canada Duration: 2011 May 1 → 2011 May 6 |
Other
| Other | Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting |
|---|---|
| Country | Canada |
| City | Montreal, QC |
| Period | 11/5/1 → 11/5/6 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate. / Wu, Tian Li; Huang, Chih Fang; Cheng, Chun-Hu.
Wide Bandgap Semiconductor Materials and Devices 12. Vol. 35 6. ed. 2011. p. 173-183.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate
AU - Wu, Tian Li
AU - Huang, Chih Fang
AU - Cheng, Chun-Hu
PY - 2011/8/1
Y1 - 2011/8/1
N2 - This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.
AB - This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.
UR - http://www.scopus.com/inward/record.url?scp=79960752940&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79960752940&partnerID=8YFLogxK
U2 - 10.1149/1.3570859
DO - 10.1149/1.3570859
M3 - Conference contribution
AN - SCOPUS:79960752940
SN - 9781566778671
VL - 35
SP - 173
EP - 183
BT - Wide Bandgap Semiconductor Materials and Devices 12
ER -