@inproceedings{0e278155577147b9a2fc3dc4243d8055,
title = "Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate",
abstract = "This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.",
author = "Wu, {Tian Li} and Huang, {Chih Fang} and Cheng, {Chun Hu}",
year = "2011",
month = aug,
day = "1",
doi = "10.1149/1.3570859",
language = "English",
isbn = "9781566778671",
series = "ECS Transactions",
number = "6",
pages = "173--183",
booktitle = "Wide Bandgap Semiconductor Materials and Devices 12",
edition = "6",
note = "Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting ; Conference date: 01-05-2011 Through 06-05-2011",
}