Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate

Tian Li Wu; Chih Fang Huang; Chun Hu Cheng

doi:10.1149/1.3570859

Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate

Tian Li Wu, Chih Fang Huang, Chun Hu Cheng

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with f_T/f_MAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.

Original language	English
Title of host publication	Wide Bandgap Semiconductor Materials and Devices 12
Pages	173-183
Number of pages	11
Edition	6
DOIs	https://doi.org/10.1149/1.3570859
Publication status	Published - 2011 Aug 1
Externally published	Yes
Event	Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, Canada Duration: 2011 May 1 → 2011 May 6

Publication series

Name	ECS Transactions
Number	6
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting
Country	Canada
City	Montreal, QC
Period	11/5/1 → 11/5/6

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ASJC Scopus subject areas

Engineering(all)

Cite this

Wu, T. L., Huang, C. F., & Cheng, C. H. (2011). Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate. In Wide Bandgap Semiconductor Materials and Devices 12 (6 ed., pp. 173-183). (ECS Transactions; Vol. 35, No. 6). https://doi.org/10.1149/1.3570859

@inproceedings{0e278155577147b9a2fc3dc4243d8055,

title = "Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate",

abstract = "This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.",

author = "Wu, {Tian Li} and Huang, {Chih Fang} and Cheng, {Chun Hu}",

year = "2011",

month = aug

day = "1",

doi = "10.1149/1.3570859",

language = "English",

isbn = "9781566778671",

series = "ECS Transactions",

number = "6",

pages = "173--183",

booktitle = "Wide Bandgap Semiconductor Materials and Devices 12",

edition = "6",

note = "Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting ; Conference date: 01-05-2011 Through 06-05-2011",

}

TY - GEN

T1 - Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate

AU - Wu, Tian Li

AU - Huang, Chih Fang

AU - Cheng, Chun Hu

PY - 2011/8/1

Y1 - 2011/8/1

N2 - This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.

AB - This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.

UR - http://www.scopus.com/inward/record.url?scp=79960752940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960752940&partnerID=8YFLogxK

U2 - 10.1149/1.3570859

DO - 10.1149/1.3570859

M3 - Conference contribution

AN - SCOPUS:79960752940

SN - 9781566778671

T3 - ECS Transactions

SP - 173

EP - 183

BT - Wide Bandgap Semiconductor Materials and Devices 12

T2 - Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting

Y2 - 1 May 2011 through 6 May 2011

ER -

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10.1149/1.3570859