Abstract
This study has provided considerable insight into the impact of device down scaling on the characteristics of RF devices. This type of RF devices, featuring a thin p-layer based on a semi-insulating substrate, is free from the unwanted parasitic effects resulting from traditional conducting substrates. We fabricated 4H-SiC RF MOSFETs with fT/fMAX of 0.7/1.5 GHz and, in so doing, identified the key issues associated with short channel effects, influencing device mobility and the RF characteristics of RF MOSFETs on a semi-insulating substrate.
| Original language | English |
|---|---|
| Title of host publication | Wide Bandgap Semiconductor Materials and Devices 12 |
| Pages | 173-183 |
| Number of pages | 11 |
| Edition | 6 |
| DOIs | |
| Publication status | Published - 2011 Aug 1 |
| Event | Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting - Montreal, QC, Canada Duration: 2011 May 1 → 2011 May 6 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 6 |
| Volume | 35 |
| ISSN (Print) | 1938-5862 |
| ISSN (Electronic) | 1938-6737 |
Other
| Other | Wide Bandgap Semiconductor Materials and Devices 12 - 219th ECS Meeting |
|---|---|
| Country | Canada |
| City | Montreal, QC |
| Period | 11/5/1 → 11/5/6 |
ASJC Scopus subject areas
- Engineering(all)
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Cite this
Wu, T. L., Huang, C. F., & Cheng, C. H. (2011). Characteristics of 4H-SiC RF MOSFETs on a semi-insulating substrate. In Wide Bandgap Semiconductor Materials and Devices 12 (6 ed., pp. 173-183). (ECS Transactions; Vol. 35, No. 6). https://doi.org/10.1149/1.3570859