Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

Jun Ma; Chien Liu; Wei Dong Liu; Yu Wen Hung; Yu Chi Fan; Hsiao Hsuan Hsu; Zhi Wei Zheng; Chun Hu Cheng

doi:10.1109/TNANO.2019.2961631

Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

Jun Ma, Chien Liu, Wei Dong Liu, Yu Wen Hung, Yu Chi Fan, Hsiao Hsuan Hsu, Zhi Wei Zheng^*, Chun Hu Cheng

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, we reported a hybrid multi-PNPN channel junctionless field effect transistor (JLFET) with negative capacitance (NC) effect by simulation. By incorporating a ferroelectric HfAlO capacitor with NC effect, an extremely low subthreshold swing of 34 mV/decade, a very high on/off current ratio and a very low driven voltage were achieved in the NC-enhanced hybrid multi-PNPN channel JLFET. This novel device not only improves the on-state current reduction while channel scaling down, but also shows great potential for the next-generation low-power three-dimensional stacked integrated circuit applications.

Original language	English
Article number	8946883
Pages (from-to)	89-93
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	19
DOIs	https://doi.org/10.1109/TNANO.2019.2961631
Publication status	Published - 2020

Keywords

Gate-all-around
junctionless
negative effect

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2019.2961631

Cite this

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title = "Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect",

abstract = "In this study, we reported a hybrid multi-PNPN channel junctionless field effect transistor (JLFET) with negative capacitance (NC) effect by simulation. By incorporating a ferroelectric HfAlO capacitor with NC effect, an extremely low subthreshold swing of 34 mV/decade, a very high on/off current ratio and a very low driven voltage were achieved in the NC-enhanced hybrid multi-PNPN channel JLFET. This novel device not only improves the on-state current reduction while channel scaling down, but also shows great potential for the next-generation low-power three-dimensional stacked integrated circuit applications.",

keywords = "Gate-all-around, junctionless, negative effect",

author = "Jun Ma and Chien Liu and Liu, {Wei Dong} and Hung, {Yu Wen} and Fan, {Yu Chi} and Hsu, {Hsiao Hsuan} and Zheng, {Zhi Wei} and Cheng, {Chun Hu}",

note = "Publisher Copyright: {\textcopyright} 2002-2012 IEEE.",

year = "2020",

doi = "10.1109/TNANO.2019.2961631",

language = "English",

volume = "19",

pages = "89--93",

journal = "IEEE Transactions on Nanotechnology",

issn = "1536-125X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

AU - Ma, Jun

AU - Liu, Chien

AU - Liu, Wei Dong

AU - Hung, Yu Wen

AU - Fan, Yu Chi

AU - Hsu, Hsiao Hsuan

AU - Zheng, Zhi Wei

AU - Cheng, Chun Hu

PY - 2020

Y1 - 2020

N2 - In this study, we reported a hybrid multi-PNPN channel junctionless field effect transistor (JLFET) with negative capacitance (NC) effect by simulation. By incorporating a ferroelectric HfAlO capacitor with NC effect, an extremely low subthreshold swing of 34 mV/decade, a very high on/off current ratio and a very low driven voltage were achieved in the NC-enhanced hybrid multi-PNPN channel JLFET. This novel device not only improves the on-state current reduction while channel scaling down, but also shows great potential for the next-generation low-power three-dimensional stacked integrated circuit applications.

AB - In this study, we reported a hybrid multi-PNPN channel junctionless field effect transistor (JLFET) with negative capacitance (NC) effect by simulation. By incorporating a ferroelectric HfAlO capacitor with NC effect, an extremely low subthreshold swing of 34 mV/decade, a very high on/off current ratio and a very low driven voltage were achieved in the NC-enhanced hybrid multi-PNPN channel JLFET. This novel device not only improves the on-state current reduction while channel scaling down, but also shows great potential for the next-generation low-power three-dimensional stacked integrated circuit applications.

KW - Gate-all-around

KW - junctionless

KW - negative effect

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SP - 89

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JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

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Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

Abstract

Keywords

ASJC Scopus subject areas

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