Characteristic Simulation of Hybrid Multilayer Junctionless Field Effect Transistors with Negative Capacitance Effect

Jun Ma, Chien Liu, Wei Dong Liu, Yu Wen Hung, Yu Chi Fan, Hsiao Hsuan Hsu, Zhi Wei Zheng, Chun Hu Cheng

Research output: Contribution to journalArticle


In this study, we reported a hybrid multi-PNPN channel junctionless field effect transistor (JLFET) with negative capacitance (NC) effect by simulation. By incorporating a ferroelectric HfAlO capacitor with NC effect, an extremely low subthreshold swing of 34 mV/decade, a very high on/off current ratio and a very low driven voltage were achieved in the NC-enhanced hybrid multi-PNPN channel JLFET. This novel device not only improves the on-state current reduction while channel scaling down, but also shows great potential for the next-generation low-power three-dimensional stacked integrated circuit applications.

Original languageEnglish
Article number8946883
Pages (from-to)89-93
Number of pages5
JournalIEEE Transactions on Nanotechnology
Publication statusPublished - 2020 Jan 1



  • Gate-all-around
  • junctionless
  • negative effect

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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