Channel modification engineering by plasma processing in tin-oxide thin film transistor: Experimental results and first-principles calculation

Y. C. Chiu, P. C. Chen, S. L. Chang, Z. W. Zheng, Chun-Hu Cheng, G. L. Liou, H. L. Kao, Y. H. Wu, C. Y. Chang

Research output: Contribution to journalArticle

Abstract

In this paper, we investigated the effects of oxygen plasma treatment on tin oxide (SnO x ) thin film transistors (TFTs). By using oxygen plasma treatment on SnO x active channel layer, excess oxygen was incorporated to the channel layer and converted oxygen-deficient SnO x to oxygen-rich SnO 2-x , which in turn causes the device operation from p-type to n-type. Tuning the different exposure time of oxygen plasma, the optimal TFT device exhibits n-type properties with an on/off current ratio of 2.6 × 10 4 , a very high field-effect mobility of 89 cm 2 V -1 s −1 , and a threshold voltage of −0.95 V. Furthermore, the effects of oxygen plasma treatment on band structure, density of states and electron density difference of the SnO x channel layer were performed by the first-principles calculation using density functional theory. The results show that the oxygen plasma treatment approach has high potential for high-performance TFT applications.

Original languageEnglish
Pages (from-to)Q53-Q57
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number4
DOIs
Publication statusPublished - 2017 Jan 1

Fingerprint

Plasma applications
Thin film transistors
Tin oxides
Oxide films
Oxygen
Plasmas
stannic oxide
Threshold voltage
Band structure
Density functional theory
Carrier concentration
Tuning

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Channel modification engineering by plasma processing in tin-oxide thin film transistor : Experimental results and first-principles calculation. / Chiu, Y. C.; Chen, P. C.; Chang, S. L.; Zheng, Z. W.; Cheng, Chun-Hu; Liou, G. L.; Kao, H. L.; Wu, Y. H.; Chang, C. Y.

In: ECS Journal of Solid State Science and Technology, Vol. 6, No. 4, 01.01.2017, p. Q53-Q57.

Research output: Contribution to journalArticle

Chiu, Y. C. ; Chen, P. C. ; Chang, S. L. ; Zheng, Z. W. ; Cheng, Chun-Hu ; Liou, G. L. ; Kao, H. L. ; Wu, Y. H. ; Chang, C. Y. / Channel modification engineering by plasma processing in tin-oxide thin film transistor : Experimental results and first-principles calculation. In: ECS Journal of Solid State Science and Technology. 2017 ; Vol. 6, No. 4. pp. Q53-Q57.
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AU - Chang, S. L.

AU - Zheng, Z. W.

AU - Cheng, Chun-Hu

AU - Liou, G. L.

AU - Kao, H. L.

AU - Wu, Y. H.

AU - Chang, C. Y.

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