Catalyst-free selective-area growth of vertically aligned zinc oxide nanowires

Shu Te Ho; Chiu Yen Wang; Hsiang Lin Liu; Heh Nan Lin

doi:10.1016/j.cplett.2008.08.037

Catalyst-free selective-area growth of vertically aligned zinc oxide nanowires

Shu Te Ho
, Chiu Yen Wang
, Hsiang Lin Liu
, Heh Nan Lin^*

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

An effective method for the catalyst-free selective-area growth of single-crystalline zinc oxide nanowires on patterned substrates defined by e-beam lithography and treated by chemical etching with increased surface roughness is reported. The nanowire growth is realized via a surface-roughness-assisted vapor-solid mechanism by thermal evaporation. The nanowires are vertically aligned on sapphire and randomly oriented on silicon substrates.

Original language	English
Pages (from-to)	141-144
Number of pages	4
Journal	Chemical Physics Letters
Volume	463
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2008.08.037
Publication status	Published - 2008 Sept 22

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1016/j.cplett.2008.08.037

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title = "Catalyst-free selective-area growth of vertically aligned zinc oxide nanowires",

abstract = "An effective method for the catalyst-free selective-area growth of single-crystalline zinc oxide nanowires on patterned substrates defined by e-beam lithography and treated by chemical etching with increased surface roughness is reported. The nanowire growth is realized via a surface-roughness-assisted vapor-solid mechanism by thermal evaporation. The nanowires are vertically aligned on sapphire and randomly oriented on silicon substrates.",

author = "Ho, \{Shu Te\} and Wang, \{Chiu Yen\} and Liu, \{Hsiang Lin\} and Lin, \{Heh Nan\}",

note = "Funding Information: Financial support from National Nanoscience and Nanotechnology Program, National Science Council under Grant No. 96-2120-M-002-017 is gratefully acknowledged.",

year = "2008",

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doi = "10.1016/j.cplett.2008.08.037",

language = "English",

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AU - Ho, Shu Te

AU - Wang, Chiu Yen

AU - Liu, Hsiang Lin

AU - Lin, Heh Nan

N1 - Funding Information: Financial support from National Nanoscience and Nanotechnology Program, National Science Council under Grant No. 96-2120-M-002-017 is gratefully acknowledged.

PY - 2008/9/22

Y1 - 2008/9/22

N2 - An effective method for the catalyst-free selective-area growth of single-crystalline zinc oxide nanowires on patterned substrates defined by e-beam lithography and treated by chemical etching with increased surface roughness is reported. The nanowire growth is realized via a surface-roughness-assisted vapor-solid mechanism by thermal evaporation. The nanowires are vertically aligned on sapphire and randomly oriented on silicon substrates.

AB - An effective method for the catalyst-free selective-area growth of single-crystalline zinc oxide nanowires on patterned substrates defined by e-beam lithography and treated by chemical etching with increased surface roughness is reported. The nanowire growth is realized via a surface-roughness-assisted vapor-solid mechanism by thermal evaporation. The nanowires are vertically aligned on sapphire and randomly oriented on silicon substrates.

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UR - https://www.scopus.com/pages/publications/51349091798#tab=citedBy

U2 - 10.1016/j.cplett.2008.08.037

DO - 10.1016/j.cplett.2008.08.037

M3 - Article

AN - SCOPUS:51349091798

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VL - 463

SP - 141

EP - 144

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-3

ER -

Catalyst-free selective-area growth of vertically aligned zinc oxide nanowires

Abstract

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