Catalyst-free selective-area growth of vertically aligned zinc oxide nanowires

Shu Te Ho, Chiu Yen Wang, Hsiang Lin Liu, Heh Nan Lin*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)


An effective method for the catalyst-free selective-area growth of single-crystalline zinc oxide nanowires on patterned substrates defined by e-beam lithography and treated by chemical etching with increased surface roughness is reported. The nanowire growth is realized via a surface-roughness-assisted vapor-solid mechanism by thermal evaporation. The nanowires are vertically aligned on sapphire and randomly oriented on silicon substrates.

Original languageEnglish
Pages (from-to)141-144
Number of pages4
JournalChemical Physics Letters
Issue number1-3
Publication statusPublished - 2008 Sept 22

ASJC Scopus subject areas

  • General Physics and Astronomy
  • Physical and Theoretical Chemistry


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