Carrier transfer induced photoluminescence change in metal-semiconductor core-shell nanostructures

H. Y. Lin, Y. F. Chen, J. G. Wu, D. I. Wang, C. C. Chen

Research output: Contribution to journalArticle

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Abstract

Metal-semiconductor core-shell nanostructures have been synthesized to explore the influence of metal nanostructures on the photoluminescence of semiconductors. Up to 40 times enhancement in the emission intensity was observed in the Au-CdS core-shell nanostructures. The mechanism where the excited electrons on Au surface by surface plasmon wave transfer to the conduction band of the CdS shell and recombine with holes in the valence band was proposed to interpret the enhancement. Our model can also be used to explain the quenched emission in FePt-CdS core-shell nanostructures and Au-CdSe nanodumbbells.

Original languageEnglish
Article number161911
JournalApplied Physics Letters
Volume88
Issue number16
DOIs
Publication statusPublished - 2006 Apr 17

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photoluminescence
metals
augmentation
conduction bands
valence
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Carrier transfer induced photoluminescence change in metal-semiconductor core-shell nanostructures. / Lin, H. Y.; Chen, Y. F.; Wu, J. G.; Wang, D. I.; Chen, C. C.

In: Applied Physics Letters, Vol. 88, No. 16, 161911, 17.04.2006.

Research output: Contribution to journalArticle

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