Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes

Miin Jang Chen; Ching Fuh Lin; M. H. Lee; S. T. Chang; C. W. Liu

doi:10.1063/1.1405429

Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes

Miin Jang Chen^*
, Ching Fuh Lin
, M. H. Lee
, S. T. Chang
, C. W. Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO₂ interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm². The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers.

Original language	English
Pages (from-to)	2264-2266
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	14
DOIs	https://doi.org/10.1063/1.1405429
Publication status	Published - 2001 Oct 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1405429

Cite this

@article{b3fbb002dafa40d5b21d1177719d416c,

title = "Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes",

abstract = "The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers.",

author = "Chen, \{Miin Jang\} and Lin, \{Ching Fuh\} and Lee, \{M. H.\} and Chang, \{S. T.\} and Liu, \{C. W.\}",

year = "2001",

month = oct,

day = "1",

doi = "10.1063/1.1405429",

language = "English",

volume = "79",

pages = "2264--2266",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Inc.",

number = "14",

}

TY - JOUR

T1 - Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes

AU - Chen, Miin Jang

AU - Lin, Ching Fuh

AU - Lee, M. H.

AU - Chang, S. T.

AU - Liu, C. W.

PY - 2001/10/1

Y1 - 2001/10/1

N2 - The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers.

AB - The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers.

UR - https://www.scopus.com/pages/publications/0035475479

UR - https://www.scopus.com/pages/publications/0035475479#tab=citedBy

U2 - 10.1063/1.1405429

DO - 10.1063/1.1405429

M3 - Article

AN - SCOPUS:0035475479

SN - 0003-6951

VL - 79

SP - 2264

EP - 2266

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this