Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes

Miin Jang Chen; Ching Fuh Lin; M. H. Lee; S. T. Chang; C. W. Liu

doi:10.1063/1.1405429

Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes

Miin Jang Chen^*, Ching Fuh Lin, M. H. Lee, S. T. Chang, C. W. Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO₂ interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm². The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers.

Original language	English
Pages (from-to)	2264-2266
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	14
DOIs	https://doi.org/10.1063/1.1405429
Publication status	Published - 2001 Oct 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes",

abstract = "The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers.",

author = "Chen, {Miin Jang} and Lin, {Ching Fuh} and Lee, {M. H.} and Chang, {S. T.} and Liu, {C. W.}",

year = "2001",

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doi = "10.1063/1.1405429",

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T1 - Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes

AU - Chen, Miin Jang

AU - Lin, Ching Fuh

AU - Lee, M. H.

AU - Chang, S. T.

AU - Liu, C. W.

PY - 2001/10/1

Y1 - 2001/10/1

N2 - The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers.

AB - The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers.

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DO - 10.1063/1.1405429

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EP - 2266

JO - Applied Physics Letters

JF - Applied Physics Letters

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Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes

Abstract

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