Carrier lifetime measurement on electroluminescent metal-oxide-silicon tunneling diodes

Miin Jang Chen, Ching Fuh Lin, M. H. Lee, S. T. Chang, C. W. Liu

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Abstract

The temporal response of the electroluminescence at the Si band gap energy from a metal-oxide-silicon (MOS) tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley-Read-Hall (SRH) recombination lifetimes are 18 and 25.8 μs for the rising and falling edges, respectively, and that the ratio for SRH, radiative, and Auger recombinations is 1:0.196:0.096 at injection current density of 39 A/cm2. The investigation shows that the electroluminescence of the MOS tunneling diode can be significantly increased by reducing the number of the nonradiative recombination centers.

Original languageEnglish
Pages (from-to)2264-2266
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number14
DOIs
Publication statusPublished - 2001 Oct 1

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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